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Generation-recombination traps in AlGaN/GaN HEMT analyzed by time-domain and frequency-domain measurements: Impact of HTRB stress on short term and long term memory effects

Autor: Serge Karboyan, G. Astre, Jean-Guy Tartarin, Benoit Lambert, T. Noutsa

Publikováno v: 2013 IEEE International Wireless Symposium (IWS).

Wide bandgap GaN technology has emerged as a major actor among technologies devoted to high frequency, high power applications. However, GaN based transistors are still largely sensitive to damaging effects induced by interface or surface charges, ge

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cc936626ee3e90ae56c4068dd477899e
https://doi.org/10.1109/ieee-iws.2013.6616840

Improved robustness of AlGaN/GaN HEMTs using Deuterium to passivate the structural defects

Autor: G. Astre, Sylvain Delage, Laurent Bary, Jean-Guy Tartarin, J. Chevallier

Publikováno v: 2008 Conference on Optoelectronic and Microelectronic Materials and Devices
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008)
Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008), Jul 2008, Sydney, Australia. ⟨10.1109/COMMAD.2008.4802078⟩

International audience; GaN related devices have demonstrated excellent performances for high power, high temperature up to X-band applications. However, even if the reliability studies on AlGaN/GaN high electron mobility transistors (HEMT) have led

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5943c083b3376e9a8216ca09009d5515
https://hal.archives-ouvertes.fr/hal-01343322