Zobrazeno 1 - 10
of 80
pro vyhledávání: '"Fuwen Qin"'
Publikováno v:
Frontiers in Materials, Vol 7 (2020)
Several InN film samples with superb properties were prepared on a self-supporting diamond substrate for different nitrogen flow rates using an electron cyclotron resonance plasma-enhanced metal-organic chemical vapor deposition (ECR-PEMOCVD) system.
Externí odkaz:
https://doaj.org/article/24468658b546409780aba5e1719c15b4
Publikováno v:
Plant and Soil. 480:493-506
Publikováno v:
Ceramics International. 48:10874-10884
Publikováno v:
Nanotechnology. 34:235703
Y-doping can effectively improve the performance of HfO x -based resistive random-access memory (RRAM) devices, but the underlying physical mechanism of Y-doping affecting the performance of HfO x -based memristors is still missing and unclear. Altho
Publikováno v:
Applied Surface Science. 614:156161
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
Arid Land Research and Management. 34:306-318
Biocrusts (biological soil crusts), which impact plant community characteristics and soil properties, are an important feature of soil surface in terrestrial ecosystem and called ecosystem engineer...
Autor:
Jiao Bai, Weiwei Xie, Weiqi Zhang, Zhipeng Yin, Shengsheng Wei, Dehao Qu, Yue Li, Fuwen Qin, Dayu Zhou, Dejun Wang
Publikováno v:
Applied Surface Science. 600:154084
Publikováno v:
Applied Surface Science. 488:293-302
Interface properties and bias temperature instability (BTI) are the two critical issues that severely restricted the performance and reliability of SiC metal-oxide-semiconductor (MOS) devices. In this work, we simultaneously improved interface proper
Publikováno v:
Applied Surface Science. 582:152461