Zobrazeno 1 - 10
of 428
pro vyhledávání: '"Fusil, S"'
Autor:
Toulouse, C., Fischer, J., Farokhipoor, S., Yedra, L., Carla, F., Jarnac, A., Elkaim, E., Fertey, P., Audinot, J. -N., Wirtz, T., Noheda, B., Garcia, V., Fusil, S., Alonso, I. Peral, Guennou, M., Kreisel, J.
Publikováno v:
Physical Review Materials, 5, 024404, 2021
Helium implantation in epitaxial thin films is a way to control the out-of-plane deformation independently from the in-plane strain controlled by epitaxy. In particular, implantation by means of a helium microscope allows for local implantation and p
Externí odkaz:
http://arxiv.org/abs/2102.07557
Autor:
Gross, I., Akhtar, W., Garcia, V., Martínez, L. J., Chouaieb, S., Garcia, K., Carrétéro, C., Barthélémy, A., Appel, P., Maletinsky, P., Kim, J. -V., Chauleau, J. Y., Jaouen, N., Viret, M., Bibes, M., Fusil, S., Jacques, V.
Publikováno v:
Nature 549, 252-256 (2017)
While ferromagnets are at the heart of daily life applications, their large magnetization and resulting energy cost for switching bring into question their suitability for reliable low-power spintronic devices. Non-collinear antiferromagnetic systems
Externí odkaz:
http://arxiv.org/abs/2011.12399
Autor:
Haykal, A., Fischer, J., Akhtar, W., Chauleau, J. -Y., Sando, D., Finco, A., Carretero, C., Jaouen, N., Bibes, M., Viret, M., Fusil, S., Jacques, V., Garcia, V.
Antiferromagnetic thin films are currently generating considerable excitement for low dissipation magnonics and spintronics. However, while tuneable antiferromagnetic textures form the backbone of functional devices, they are virtually unknown at the
Externí odkaz:
http://arxiv.org/abs/1912.12470
Autor:
Barrett, N., Rault, J. E., Wang, J. L., Mathieu, C., Locatelli, A., Mentes, T. O., Nino, M. A., Fusil, S., Bibes, M., Barthelemy, A., Sando, D., Ren, W., Prosandeev, S., Bellaiche, L., Vilquin, B., Petraru, A., Krug, I. P., Schneider, C. M.
Publikováno v:
Journal of Applied Physics 113, 187217 (2013)
The application of PhotoEmission Electron Microscopy (PEEM) and Low Energy Electron Microscopy (LEEM) techniques to the study of the electronic and chemical structure of ferroelectric materials is reviewed. Electron optics in both techniques gives sp
Externí odkaz:
http://arxiv.org/abs/1806.04849
Autor:
Marinova, M., Rault, J. E., Gloter, A., Nemsak, S., Palsson, G. K., Rueff, J. -P., Fadley, C. S., Carretero, C., Yamada, H., March, K., Garcia, V., Fusil, S., Barthelemy, A., Stephan, O., Colliex, C., Bibes, M.
Publikováno v:
Nano Lett. 15, 2533 (2015)
The electric field control of functional properties is a crucial goal in oxide-based electronics. Non-volatile switching between different resistivity or magnetic states in an oxide channel can be achieved through charge accumulation or depletion fro
Externí odkaz:
http://arxiv.org/abs/1708.09160
Autor:
Sando, D., Yang, Yurong, Bousquet, E., Carretero, C., Garcia, V., Fusil, S., Dolfi, D., Barthelemy, A., Ghosez, Ph., Bellaiche, L., Bibes, M.
Publikováno v:
Nature Commun. 7, 10718 (2016)
The control of optical fields is usually achieved through the electro-optic or acousto-optic effect in single-crystal ferroelectric or polar compounds such as LiNbO3 or quartz. In recent years, tremendous progress has been made in ferroelectric oxide
Externí odkaz:
http://arxiv.org/abs/1708.08809
Autor:
Begon-Lours, L., Rouco, V., Sander, A., Trastoy, J., Bernard, R., Jacquet, E., Bouzehouane, K., Fusil, S., Garcia, V., Barthelemy, A., Bibes, M., Santamaría, J., Villegas, J. E.
Publikováno v:
Phys. Rev. Applied 7, 064015 (2017)
In all-oxide ferroelectric (FE) - superconductor (S) bilayers, due to the low carrier concentration of oxides compared to transition metals, the FE interfacial polarization charges induce an accumulation (or depletion) of charge carriers in the S. Th
Externí odkaz:
http://arxiv.org/abs/1703.01219
Publikováno v:
Phys. Rev. B 94, 094107 (2016)
Using an experimental setup designed to scan a submicron sized light spot and collect the photogenerated current through larger electrodes, we map the photovoltaic response in ferroelectric BiFeO3 single crystals. We study the effect produced by a un
Externí odkaz:
http://arxiv.org/abs/1602.07204
Autor:
Boyn, S., Girod, S., Garcia, V., Fusil, S., Xavier, S., Deranlot, C., Yamada, H., Carrétéro, C., Jacquet, E., Bibes, M., Barthélémy, A., Grollier, J.
Publikováno v:
Appl. Phys. Lett. 104, 052909 (2014)
In tunnel junctions with ferroelectric barriers, switching the polarization direction modifies the electrostatic potential profile and the associated average tunnel barrier height. This results in strong changes of the tunnel transmission and associa
Externí odkaz:
http://arxiv.org/abs/1402.1289
Autor:
Rault, J. E., Ren, W., Prosandeev, S., Lisenkov, S., Sando, D., Fusil, S., Bibes, M., Barthelemy, A., Bellaiche, L., Barrett, N.
Publikováno v:
Phys. Rev. Lett. 109, 267601 (2012)
We measure the remnant polarization of ferroelectric domains in BiFeO3 films down to 3.6 nm using low energy electron and photoelectron emission microscopy. The measured polarization decays strongly below a critical thickness of 5-7 nm predicted by c
Externí odkaz:
http://arxiv.org/abs/1210.3806