Zobrazeno 1 - 10
of 388
pro vyhledávání: '"Fushan Li"'
Autor:
Haomin Chen, Qunying Zeng, Yangbin Zhu, Tuo Wu, Yijie Fan, Tailiang Guo, Hailong Hu, Fushan Li
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 306-309 (2024)
Zinc oxidenanoparticles (ZnO NPs) is widely used as electron transport layer material in quantum dot light-emitting diodes (QLED) due to its high carrier mobility, unique photoelectric properties and good stability. However, because ZnO has higher el
Externí odkaz:
https://doaj.org/article/8608e5bd74d44b3cb90fb8ecb0a8b759
Publikováno v:
AIP Advances, Vol 14, Iss 4, Pp 045037-045037-5 (2024)
Quantum dot light-emitting diodes (QLEDs), as an emerging display technology, have garnered widespread attention due to their excellent color rendering, high efficiency, and long lifespan. However, the inherent differences in the properties of charge
Externí odkaz:
https://doaj.org/article/86876ae867264dc68ec69b98a0378a96
Autor:
Fushan Li, Nannan Wu, Hideo Kimura, Yuan Wang, Ben Bin Xu, Ding Wang, Yifan Li, Hassan Algadi, Zhanhu Guo, Wei Du, Chuanxin Hou
Publikováno v:
Nano-Micro Letters, Vol 15, Iss 1, Pp 1-14 (2023)
Highlights 3D cubic hollow core–shell NiCo2O4@C composites were synthesized. Oxygen vacancies were introduced into the prepared composites. Ultrabroad effective absorption bandwidth of 12.48 GHz was obtained. The absorption performance mechanism of
Externí odkaz:
https://doaj.org/article/bb075ec9b6ce47f0b478e6e446c42f05
Autor:
Chuanxin Hou, Fushan Li, Hideo Kimura, Qiuyu Li, Liyuan Liu, Qiqi Chu, Jinmiao Wu, Guohua Fan, Wei Du
Publikováno v:
Journal of Materials Research and Technology, Vol 25, Iss , Pp 5148-5158 (2023)
High-performance electromagnetic wave-absorbing materials have attracted much attention owing to their wide application in military stealth, camouflage, and electromagnetic protection. Carbon materials have more advantages in achieving the performanc
Externí odkaz:
https://doaj.org/article/ece3db8c9a46431fbde6c52d035763a9
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-10 (2023)
Abstract Artificial electronic synapses are commonly used to simulate biological synapses to realize various learning functions, regarded as one of the key technologies in the next generation of neurological computation. This work used a simple spin
Externí odkaz:
https://doaj.org/article/25a51b9f462449238be69e49e92cbb0d
Autor:
Wenzhong Zhu, Xiaoqian Jiang, Chen Chen, Shaojie Wu, Yongfu Cai, Fushan Li, Ran Wei, Tan Wang
Publikováno v:
Metals, Vol 14, Iss 5, p 546 (2024)
The industrialization of Fe-based amorphous alloys with high a saturation magnetic flux density (Bs) has been limited so far due to their inadequate amorphous forming ability (AFA). In this study, the effects of substituting Si with C on the AFA, the
Externí odkaz:
https://doaj.org/article/cf3eb97d9cc045638781d4f16c4053d8
Autor:
Songman Ju, Yangbin Zhu, Hailong Hu, Yang Liu, Zhongwei Xu, Jinping Zheng, Chaomin Mao, Yongshen Yu, Kaiyu Yang, Lihua Lin, Tailiang Guo, Fushan Li
Publikováno v:
Light: Science & Applications, Vol 11, Iss 1, Pp 1-9 (2022)
Schematic diagrams of SD-PQLED based on light interaction layer and light-emitting layer and proof-of-concept diagram of the light interactive display by a four-pixel SD-PQLEDs.
Externí odkaz:
https://doaj.org/article/aacf96cd1a7241b9ac63b2f12cd8ba9e
Autor:
Kaiyu Yang, Jinliang Mao, Jinping Zheng, Yongshen Yu, Baolin Xu, Qingkai Zhang, Xukeng Weng, Qiuxiang Lin, Tailiang Guo, Fushan Li
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 4, Pp n/a-n/a (2023)
Abstract Quasi‐2D perovskite light‐emitting diodes (PeLEDs) are promising candidates to realize superior luminescent. However, the poorly controlled phase distribution and surface defects hinder the improvement of the device's performance. Here,
Externí odkaz:
https://doaj.org/article/58af3aa796424d34bb5a094e0feb20de
Autor:
Wangxiao Jin, Yunzhou Deng, Bingbing Guo, Yaxiao Lian, Baodan Zhao, Dawei Di, Xiaowei Sun, Kai Wang, Shuming Chen, Yixing Yang, Weiran Cao, Song Chen, Wenyu Ji, Xuyong Yang, Yuan Gao, Shuangpeng Wang, Huaibin Shen, Jialong Zhao, Lei Qian, Fushan Li, Yizheng Jin
Publikováno v:
npj Flexible Electronics, Vol 6, Iss 1, Pp 1-12 (2022)
Abstract Quantum dot light-emitting diodes (QLEDs) are a class of high-performance solution-processed electroluminescent (EL) devices highly attractive for next-generation display applications. Despite the encouraging advances in the mechanism invest
Externí odkaz:
https://doaj.org/article/25fb33a3f0a1494dabaf72a65129cb98
Autor:
Zhiqi Luo, Yongshen Yu, Kaiyu Yang, Lihua Lin, Jintang Lin, Tailiang Guo, Hailong Hu, Fushan Li
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 3, Pp n/a-n/a (2023)
Abstract ZnSe/ZnS core/shell quantum dots (QDs) are environmental‐friendly blue light‐emitting material, which can easily achieve deep blue emission upon external excitation. However, its deep valence band (VB) and numerous defect states remain h
Externí odkaz:
https://doaj.org/article/c83ca1530f094eb3b73b9be9a0fe4a07