Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Fusen Chen"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:2830-2834
A magnetron sputtering source using sustained self-sputtering has been developed for uniform deposition of copper on large wafers (200 mm in diameter). Usually, Ar gas is used in sputter deposition. In sustained self-sputtering, no Ar gas was used fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64002bf54212cbe52ba2177680dfb2e4
https://doi.org/10.1116/1.581950
https://doi.org/10.1116/1.581950
Publikováno v:
Defect and Diffusion Forum. :919-924
In this article, we present results of systematic studies of the effects of grain boundary parameters upon diffusion-induced grain boundary migration (DIGM). It is shown that grain boundary velocity, solute penetration depth, concentration of deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b7d538be761f59f750ba64bf406a74d
https://doi.org/10.4028/www.scientific.net/ddf.66-69.919
https://doi.org/10.4028/www.scientific.net/ddf.66-69.919
Publikováno v:
Metallurgical Transactions A. 21:2363-2367
In this article, we present results of systematic studies of the effects of grain boundary parameters upon diffusion-induced grain boundary migration (DIGM). It is shown that grain boundary velocity, solute penetration depth, concentration of deposit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15a4db06c33ded45baa98f5712992bfd
https://doi.org/10.1007/bf02646983
https://doi.org/10.1007/bf02646983
Publikováno v:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..
A novel PVD sputtering source has been developed based on a high power-density concept. The new sputtering source dramatically increases the metal ion traction which improves TaN/Ta barrier and Cu seed step coverage and gap fill capability in Cu meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ced19ade21d44d0713d5382462f9842
https://doi.org/10.1109/icsict.2004.1435053
https://doi.org/10.1109/icsict.2004.1435053
Publikováno v:
MRS Proceedings. 564
This paper reports an extensive interfacial study of Cu deposited on Ta and TaN barrier layers. It has been reported that the Cu/Ta interface develops a uniform and thin amorphous layer at the interface upon thermal treatment[l]. However, our high re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f970fd7c79532dcf4cd00259c3d52fb8
https://doi.org/10.1557/proc-564-293
https://doi.org/10.1557/proc-564-293
Publikováno v:
MRS Proceedings. 514
Ionized Metal Plasma (IMP) technology has been developed for liners and wetting layer deposition of sub-quarter-micron devices. Numerical modeling showed the unique advantages of IMP source over ECR source and long throw sputtering in enhancing botto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21b356fa89f0177e870f2f28069dabda
https://doi.org/10.1557/proc-514-65
https://doi.org/10.1557/proc-514-65
Publikováno v:
MRS Proceedings. 514
We have investigated the effects of oxygen contamination on the agglomeration of thin Cu films fabricated by physical vapor deposition on Ta barriers. Thin Cu films on clean, ultrahigh vacuum-deposited Ta barriers were stable against agglomeration wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d551a6fa0d34bea5c853ffdd184bae1
https://doi.org/10.1557/proc-514-303
https://doi.org/10.1557/proc-514-303
Autor:
Fusen Chen, Alexander H. King
Publikováno v:
Scripta Metallurgica. 21:649-652
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1667c19f6b1d399afdae0d0a0c0db085
https://doi.org/10.1016/0036-9748(87)90378-4
https://doi.org/10.1016/0036-9748(87)90378-4
Autor:
Alexander H. King, Fusen Chen
Publikováno v:
Acta Metallurgica. 36:2827-2839
Diffusion induced grain boundary migration has been studied as a function of misorientation. using initially symmetrical tilt grain boundaries in copper exposed to zinc vapor. The migration rate, solute penetration depth and the zinc concentration in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::357eccb477432f3aa072245fe3f6977d
https://doi.org/10.1016/0001-6160(88)90129-0
https://doi.org/10.1016/0001-6160(88)90129-0
Autor:
Fusen Chen, Alexander H. King
Publikováno v:
Scripta Metallurgica. 20:1401-1404
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da344af23f614afad419585f60f97b39
https://doi.org/10.1016/0036-9748(86)90104-3
https://doi.org/10.1016/0036-9748(86)90104-3