Zobrazeno 1 - 10
of 118
pro vyhledávání: '"Fursina, A. A."'
Autor:
Borsoi, Francesco, Mazur, Grzegorz P., van Loo, Nick, Nowak, Michał P., Bourdet, Léo, Li, Kongyi, Korneychuk, Svetlana, Fursina, Alexandra, Memisevic, Elvedin, Badawy, Ghada, Gazibegovic, Sasa, van Hoogdalem, Kevin, Bakkers, Erik P. A. M., Kouwenhoven, Leo P., Heedt, Sebastian, Quintero-Pérez, Marina
Semiconducting-superconducting nanowires attract widespread interest owing to the possible presence of non-abelian Majorana zero modes, which hold promise for topological quantum computation. However, the search for Majorana signatures is challenging
Externí odkaz:
http://arxiv.org/abs/2009.06219
Autor:
Heedt, Sebastian, Quintero-Pérez, Marina, Borsoi, Francesco, Fursina, Alexandra, van Loo, Nick, Mazur, Grzegorz P., Nowak, Michał P., Ammerlaan, Mark, Li, Kongyi, Korneychuk, Svetlana, Shen, Jie, van de Poll, May An Y., Badawy, Ghada, Gazibegovic, Sasa, van Hoogdalem, Kevin, Bakkers, Erik P. A. M., Kouwenhoven, Leo P.
The realization of a topological qubit calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers subst
Externí odkaz:
http://arxiv.org/abs/2007.14383
Autor:
Krizek, Filip, Sestoft, Joachim E., Aseev, Pavel, Marti-Sanchez, Sara, Vaitiekenas, Saulius, Casparis, Lucas, Khan, Sabbir A., Liu, Yu, Stankevic, Tomas, Whiticar, Alexander M., Fursina, Alexandra, Boekhout, Frenk, Koops, Rene, Uccelli, Emanuele, Kouwenhoven, Leo P., Marcus, Charles M., Arbiol, Jordi, Krogstrup, Peter
Publikováno v:
Phys. Rev. Materials 2, 093401 (2018)
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we s
Externí odkaz:
http://arxiv.org/abs/1802.07808
Autor:
Burzurí, E., Island, J. O., Diaz-Torres, R., Fursina, A., Gonzalez-Campo, A., Roubeau, O., Teat, S. J., Aliaga-Alcalde, N., Ruiz, E., van der Zant, H. S. J.
Graphene electrodes are promising candidates to improve reproducibility and stability in molecular electronics through new electrode-molecule anchoring strategies. Here we report sequential electron transport in few-layer graphene transistors contain
Externí odkaz:
http://arxiv.org/abs/1602.01639
Autor:
Sebastian Heedt, Marina Quintero-Pérez, Francesco Borsoi, Alexandra Fursina, Nick van Loo, Grzegorz P. Mazur, Michał P. Nowak, Mark Ammerlaan, Kongyi Li, Svetlana Korneychuk, Jie Shen, May An Y. van de Poll, Ghada Badawy, Sasa Gazibegovic, Nick de Jong, Pavel Aseev, Kevin van Hoogdalem, Erik P. A. M. Bakkers, Leo P. Kouwenhoven
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
Advanced fabrication techniques enable a wide range of quantum devices, such as the realization of a topological qubit. Here, the authors introduce an on-chip fabrication technique based on shadow walls to implement topological qubits in an InSb nano
Externí odkaz:
https://doaj.org/article/4342ea1879844c8391fb3d3c53b33006
Publikováno v:
New J. Phys. 14, 013019 (2012)
The insulating state of magnetite (Fe$_{3}$O$_{4}$) can be disrupted by a sufficiently large dc electric field. Pulsed measurements are used to examine the kinetics of this transition. Histograms of the switching voltage show a transition width that
Externí odkaz:
http://arxiv.org/abs/1201.0772
Multiterminal measurements have typically been employed to examine electronic properties of strongly correlated electronic materials such as transition metal oxides without the influence of contact effects. In contrast, in this work we investigate th
Externí odkaz:
http://arxiv.org/abs/1011.6407
Publikováno v:
Phys. Rev. B 81, 045123 (2010)
Contact effects in devices incorporating strongly-correlated electronic materials are comparatively unexplored. We have investigated the electrically-driven phase transition in magnetite (100) thin films by four-terminal methods. In the lateral confi
Externí odkaz:
http://arxiv.org/abs/0912.5374
Publikováno v:
Phys. Rev. B 79, 245131 (2009)
In many transition metal oxides the electrical resistance is observed to undergo dramatic changes induced by large biases. In magnetite, Fe$_3$O$_4$, below the Verwey temperature, an electric field driven transition to a state of lower resistance was
Externí odkaz:
http://arxiv.org/abs/0905.3510
Publikováno v:
IOP Conference Series: Earth & Environmental Science; 2024, Vol. 1348 Issue 1, p1-6, 6p