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Akademický článek
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Autor:
Lilliehook, D., Furneaux, J. E.
We have reexamined data on the possible two dimensional metal-insulator transition at B=0 in Si-MOSFETs using a nonlinear regression method to extract all scaling parameters in a single fit. By keeping track of the magnitude of errors in the data we
Externí odkaz:
http://arxiv.org/abs/cond-mat/0009366
The non-linear (electric field-dependent) resistivity of the 2D electron system in silicon exhibits scaling as a function of electric field and electron density in both the metallic and insulating phases, providing further evidence for a true metal-i
Externí odkaz:
http://arxiv.org/abs/cond-mat/9608101
We study the behavior of the extended states of a two-dimensional electron system in silicon in a magnetic field, B. Our results show that the extended states, corresponding to the centers of different Landau levels, merge with the lowest extended st
Externí odkaz:
http://arxiv.org/abs/cond-mat/9506046
We have studied the resistivity, $\rho$, of a two-dimensional electron system in silicon in the temperature range 200 mK < T < 7.5 K at zero magnetic field at low electron densities, when the electron system is in the insulating regime. Our results s
Externí odkaz:
http://arxiv.org/abs/cond-mat/9506006
We report experimental studies of disorder-induced transitions between quantum-Hall, metallic, and insulating states in a very dilute two-dimensional electron system in silicon at a magnetic field corresponding to Landau level filling factor $\nu=1$.
Externí odkaz:
http://arxiv.org/abs/cond-mat/9503140
Autor:
Kravchenko, S. V., Mason, Whitney E., Bowker, G. E., Furneaux, J. E., Pudalov, V. M., D'Iorio, M.
We have studied the temperature dependence of resistivity, $\rho$, for a two-dimensional electron system in silicon at low electron densities, $n_s\sim10^{11}$ cm$^{-2}$, near the metal/insulator transition. The resistivity was empirically found to s
Externí odkaz:
http://arxiv.org/abs/cond-mat/9412103
Autor:
Kravchenko, S. V., Mason, Whitney, Furneaux, J. E., Caulfield, J. M., Singleton, J., Pudalov, V. M.
We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the $\nu=1$ quantum
Externí odkaz:
http://arxiv.org/abs/cond-mat/9406012
We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$), CONVENTIONAL
Externí odkaz:
http://arxiv.org/abs/cond-mat/9405082
Autor:
Gould, S, Spencer, A, Onianwa, O, Furneaux, J, Grieves, J, Summers, S, Crocker-Buqué, T, Fletcher, T, Bennett, AM, Atkinson, B, Dunning, J
Publikováno v:
Journal of Hospital Infection. 130:141-143
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e110cb8ae469b2f3d851122b0a03b5dd
https://doi.org/10.1016/j.jhin.2022.08.009
https://doi.org/10.1016/j.jhin.2022.08.009
