Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Furkan Cimen"'
Publikováno v:
Molecular and cellular biochemistry.
Advancements in artificial intelligence (AI) strengthens life-altering technology that can not only reduce human workload but also enhance speed and efficiency in medicine. Medical image segmentation, for example, MRI analysis, is an arduous task for
Autor:
Leah Kazenmayer, Gabriela Ford, Jiechao Zhang, Rezaur Rahman, Furkan Cimen, Damla Turgut, Samiul Hasan
Publikováno v:
2022 IEEE Symposium on Computers and Communications (ISCC).
Autor:
Estefania Sanchez, Caitlin Petro, Salih Safa Bacanli, Furkan Cimen, Ladislau Boloni, Damla Turgut
Publikováno v:
ICC 2022 - IEEE International Conference on Communications.
Publikováno v:
2021 IEEE Global Communications Conference (GLOBECOM).
Publikováno v:
Applied Physics Letters
A charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated. The memory shows a large threshold voltage V-t shift (4V) at low operating voltage (6/-6 V), good retention (>10 yr), and good enduran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fbb5230507803e2f184fbb5e691ab002
https://hdl.handle.net/11693/25636
https://hdl.handle.net/11693/25636
Publikováno v:
Proceedings of SPIE
Date of Conference: 3–6 February 2013 Conference name: Proceedings of SPIE, Oxide-based Materials and Devices IV In this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that asdeposited ALD TiO 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc3d234d6f3fe00c186155c26604a71c
https://hdl.handle.net/11693/28011
https://hdl.handle.net/11693/28011
Autor:
Furkan Cimen, Ammar Nayfeh, Ali Kemal Okyay, Feyza B. Oruc, Mohammad Ali Ghaffari, Ayman Rizk
Publikováno v:
IEEE Electron Device Letters
Cataloged from PDF version of article. A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8354e66c199910e934c7b029efc459d
https://hdl.handle.net/11693/21253
https://hdl.handle.net/11693/21253
Publikováno v:
ECS Meeting Abstracts. :1879-1879
Recently, graphene has been considered as a promising material for future low cost electronics because of its noteworthy properties, such as high carrier mobility, large work-function, thermal conductivity, structural robustness and optical transpare
Autor:
Sabri Alkis, Furkan Cimen, Mustafa Alevli, Nikolaus Dietz, Bülend Ortaç, Ali Kemal Okyay, Ammar Nayfeh, Nazek El-Atab
Publikováno v:
Applied Physics Letters
In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO charge trapping layer is demonstrated. Atomic layer deposited Al2O3 layers are used as tunnel and blocking oxi