Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Fumiyoshi Kawashiro"'
Autor:
Fumiyoshi KAWASHIRO, Masaaki YOSHIKAWA, Eitaro MIYAKE, Yoshiki ENDO, Tatsuo TONEDACHI, Hiroshi NISHIKAWA
Publikováno v:
Journal of Smart Processing. 11:71-77
Autor:
Kentaro Takao, Eitaro Miyake, Tatsuya Kobayashi, Fumiyoshi Kawashiro, Masaaki Yoshikawa, Hiroshi Nishikawa, Yoshiki Endo, Tatsuo Tonedachi
Publikováno v:
Microelectronics Reliability. 99:168-176
Recently, there have been moves to replace Si power devices with SiC ones, which will require new materials with higher thermal conductivity for power module assemblies owing to their higher operating temperatures. Al wire bond interconnections suffe
Autor:
Omid Mokhtari, Fumiyoshi Kawashiro, Takehiko Maeda, Satoshi Itoh, Takaki Eto, Hiroshi Nishikawa, Min-Su Kim, Tetsuya Hirose
Publikováno v:
Transactions of The Japan Institute of Electronics Packaging. 7:1-7
Wire bonding is a key technique for electrical interconnections between integrated circuit (IC) and the metal frame or printed circuit board (PCB). One of the most common wire bonding system is bonding of the Au wire to Al metallization, however, Cu
Publikováno v:
2016 International Conference on Electronics Packaging (ICEP).
Recently, there have been many developments on power devices to improve their functions. Especially, the junction temperature of power modules that equip SiC (Silicon Carbide) chips will be higher than 200 °C as current densities are too high, and n
Publikováno v:
Transactions of The Japan Institute of Electronics Packaging. 2:62-68
In this study, 60 solder compositions were examined in an effort to improve the integrity against impact loads of the solder joints on an electroless Ni–P/Au surface finish. The Ag, Cu, and Ni contents in the Sn-based solder varied from 0 to 4.5 wt
Autor:
Takaki Eto, Fumiyoshi Kawashiro, Takehiko Maeda, Tetsuya Hirose, Min-Su Kim, Hiroshi Nishikawa, Satoshi Itou, Omid Mokhtari
Publikováno v:
2014 International Conference on Electronics Packaging (ICEP).
This research focuses on the formation and growth behavior of Cu/Al intermetallic compounds (IMCs). In order to investigate IMC growth after 30, 60 and 120 min of aging at 270, 300 and 330 °C, cross-section of Al, Cu and Cu/Al IMCs were examined by
Autor:
Tadashi Yamamoto, Toshiyuki Fujii, Takafumi Hirata, Fumiyoshi Kawashiro, Yoshihisa Maeda, Kazushige Nishizawa
Publikováno v:
Separation Science and Technology. 33:2101-2112
The isotope effect of zinc in the chemical exchange reaction using a macrocyclic ligand was not found to be ruled by the Bigeleisen-Mayer approximation, which suggested that the enrichment factor is proportional to the mass difference and is inversel
Autor:
Hiroaki Kobayashi, Koujirou Shibuya, Norikazu Motohashi, Masaya Kawano, Fumiyoshi Kawashiro, Kimura Takehiro, Yoichiro Kurita
Publikováno v:
3rd Electronics System Integration Technology Conference ESTC.
We have developed a new Fan-Out Wafer-Level Packaging (FO-WLP) technology with flexible design capabilities for multilayer fan-out redistribution layers (RDLs) connected to the fine-pitch I/O pads of chips. The prototype of a 2.0 mm × 2.0 mm FO-WLP
Autor:
Tetsuya Hirose, Satoshi Itoh, Akira Yajima, Takaki Etoh, Hiroshi Nishikawa, Takehiko Maeda, Fumiyoshi Kawashiro
Publikováno v:
Japanese Journal of Applied Physics. 54:05EC01
Wire bonding technology is used in most semiconductor products. Recently, high gold prices have forced semiconductor manufacturers to replace Au wires with Cu wires. Because Cu wire bonds are vulnerable to high temperature and humidity, they remain u
Autor:
Fumiyoshi Kawashiro, Satoshi Itoh, Takehiko Maeda, Tetsuya Hirose, Akira Yajima, Takaki Etoh, Hiroshi Nishikawa
Publikováno v:
Japanese Journal of Applied Physics; May2015, Vol. 54 Issue 5S, p1-1, 1p