Výsledky vyhledávání - "Fumitoshi Yamamoto"

ESD robustness improvement for integrated DMOS transistors -the different gate-voltage dependence of It2 between VDMOS and LDMOS transistors

Autor: Yasufumi Fujiwara, Shigeto Maegawa, Kenichi Hatasako, T. Kuroi, Akio Uenishi, Fumitoshi Yamamoto

Publikováno v: IEEJ Transactions on Electrical and Electronic Engineering. 6:361-366

This paper presents the device-level electrostatic discharge (ESD) robustness improvement for integrated vertical double-diffused MOS (VDMOS) and lateral double-diffused MOS (LDMOS) transistors by changing device structure. The ESD robustness of VDMO

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f6387298ff42d34d79c2d64274177235
https://doi.org/10.1002/tee.20669

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ESD Robustness Improvement for VDMOS Transistors to Harsh Applications

Autor: Akio Uenishi, Fumitoshi Yamamoto, T. Kuroi, Shigeto Maegawa, Kenichi Hatasako

Publikováno v: Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6cf172825073c9540a87a22c8fd32ad6
https://doi.org/10.7567/ssdm.2008.p-5-12l

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Novel Design of Vertical Double-Diffused Metal–Oxide–Semiconductor Transistor for High Electrostatic Discharge Robustness

Autor: Fumitoshi Yamamoto, Akio Uenishi, Shigeto Maegawa, Kenichi Hatasako, Takashi Kuroi

Publikováno v: Japanese Journal of Applied Physics. 48:04C074

[Bipolar]-[complementary metal–oxide–semiconductor transistor (CMOS)]–[double-diffused metal–oxide–semiconductor transistor (DMOS)] [BiC–DMOS] devices are widely used in high-voltage applications. As some applications require high electro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::693c6fc992406b6759d1dc77b1362e9e
https://doi.org/10.1143/jjap.48.04c074

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