Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Fumito Suzuki"'
Autor:
Tomo Muguruma, Andy Behr, Hirosuke Saito, Koji Kishino, Fumito Suzuki, Tom Shin, Hiroaki Umehara
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
Rapid advancements in IoT and AI technologies, are driving ever more sophisticated and powerful LSI chip designs. These semiconductors are used in a broad array of end-use applications and industries including Automotive (under-hood, sensors and info
Publikováno v:
Molecular Crystals and Liquid Crystals. 504:133-139
The vertical-type metal-base organic transistors (MBOT) are high-performance transistors which have a simple layered structure of organic/metal/organic layers. In this study, we investigated various structures for the collector layer to enhance curre
Publikováno v:
Journal of the Chemical Society, Perkin Transactions 1. :3623-3628
The reaction of 2-acetonyltetrahydrofuran 1a and 2-acetonyltetrahydropyran 1b with the potassium salt of dimethyl diazomethylphosphonate (DAMP) in the presence of MeOH produced ring enlargement product 1-methyl-3-oxacyclooctene 6a (22%) and 1-methyl-
Publikováno v:
ChemInform. 30
The reaction of 2-acetonyltetrahydrofuran 1a and 2-acetonyltetrahydropyran 1b with the potassium salt of dimethyl diazomethylphosphonate (DAMP) in the presence of MeOH produced ring enlargement product 1-methyl-3-oxacyclooctene 6a (22%) and 1-methyl-
Autor:
Koichi Endo, Fumito Suzuki, Kenichi Matsushita, Morio Takahashi, Toshiyuki Naka, Yoshiko Ikeda, Norio Yasuhara, Masakazu Yamaguchi, Akio C O Patent Divis Nakagawa, Kazutoshi Nakamura
Publikováno v:
Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
This paper presents 12 V 10A 1 chip DC/DC converter IC based on the low cost 0.6 mum BiCD process. The chip adopted low impedance metal bump technology and a high speed gate driving technique for large LDMOS, what we call "distributed driver circuit"
Autor:
Kenichi Matsushita, Kazutoshi Nakamura, Morio Takahashi, Akio Nakagawa, Fumito Suzuki, Norio Yasuhara, Koichi Endo
Publikováno v:
2006 Bipolar/BiCMOS Circuits and Technology Meeting.
In this paper, we demonstrate high frequency and 10A operation of 1 chip DC/DC converter. The chip adopted low impedance metal bump technology and a high speed gate driving technique for large LDMOS, what we call "distributed driver circuit". The fab
Autor:
Fumito Suzuki, Kenichi Matsushita, Tomoko Matsudai, Kazutoshi Nakamura, Norio Yasuhara, Toshiyuki Naka, Koichi Endo, Akio C O Patent Divis Nakagawa
Publikováno v:
Scopus-Elsevier
We propose “power CMOS,” suitable for use as large current output devices. The proposed structure can be fabricated by low cost 0.6um logic CMOS process and assures long-term reliability even under the stress of hot-electrons. The developed power
Publikováno v:
Japanese Journal of Applied Physics. 49:030202
Clear current modulation and current amplification were observed in vertical metal-base organic transistors (MBOTs) without heat treatment in air that was previously essential. The devices, which use a LiF/Al base electrode and a C60 layer under it,
Publikováno v:
AUDIOLOGY JAPAN. 18:117-127
Five cases of cerebello-pontine angle and brain-stem tumors with fluctuating hearing loss were reported. They were consisted of two cases of acoustic neurinomas, one of cerebello-pontine angle meningioma, one of hemangioblastoma of brain-stem, and on