Zobrazeno 1 - 10 of 38 pro vyhledávání: '"Fumito Nakajima"'
1
Akademický článek
Inverted p-down Design for High-Speed Photodetectors
Autor: Masahiro Nada, Fumito Nakajima, Toshihide Yoshimatsu, Yasuhiko Nakanishi, Atsushi Kanda, Takahiko Shindo, Shoko Tatsumi, Hideaki Matsuzaki, Kimikazu Sano
Publikováno v: Photonics, Vol 8, Iss 2, p 39 (2021)
We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can
Externí odkaz: https://doaj.org/article/e2d0ec10f8624e6c8604dc0e8f3fcc09
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4
Extended emission wavelength beyond 2.2 μm in strained multiple-quantum-well laser using InGaAsSb material grown on InP substrate
Autor: Manabu Mitsuhara, Wataru Kobayashi, Takahiko Shindo, Fumito Nakajima
Publikováno v: Applied Physics Letters. 122:141105
We report on the growth and lasing characteristics of 2.3%-compressive-strained InGaAsSb multiple-quantum-well (MQW) lasers on InP substrates with emission wavelengths near 2.2 μm. MQW structures with four wells were grown by metalorganic molecular
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::39fa7c240b6084b0ef83a44803979403
https://doi.org/10.1063/5.0141965
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6
Minority-electron transport through atomic-diffusion-bonded InGaAs/a-Ge/InGaAs structure studied by photodiode characterization
Autor: Miyuki Uomoto, Fumito Nakajima, Takehito Shimatsu, Takuya Hoshi, Hideaki Matsuzaki, Masahiro Nada, Yamada Yuki
Publikováno v: Japanese Journal of Applied Physics. 59:016501
We experimentally investigated minority-electron transport through a wafer-bonded InGaAs/a-Ge/InGaAs structure fabricated by using atomic-diffusion-bonding (ADB) technology. The transport properties of minority electrons were examined in a uni-travel
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aeb46d21d1017754c60f82441e5caafd
https://doi.org/10.7567/1347-4065/ab5c65
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7
The state-of-the-art technology of NOx control
Autor: Ikuhisa Hamada, Fumito Nakajima
Publikováno v: Catalysis Today. 29:109-115
The TiO 2 -based DeNO x catalyst which is now commercially implemented world-wide is described, emphasizing the importance of the resistance to SO x -poisoning and plugging by particulates. Various NO x reduction technologies are compared and recent
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::866b0de21c9bdb0a4cf82cd7d22a1205
https://doi.org/10.1016/0920-5861(95)00288-x
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9
Akademický článek
High-sensitivity Avalanche Photodiode and Receiver Optical Subassembly Technology for 100-Gbit/s Ethernet.
Autor: Fumito Nakajima1, Masahiro Nada2, Toshihide Yoshimatsu1
Publikováno v: NTT Technical Review. Oct2015, Vol. 13 Issue 10, p1-7. 7p.
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