Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Fumimasa Horikiri"'
Publikováno v:
Applied Physics Express, Vol 17, Iss 5, p 055502 (2024)
We have developed a pore-assisted separation (PAS) method for the fabrication of free-standing GaN substrates, where bulk GaN crystals were separated from seed GaN templates at electrochemically formed porous layers. The pore size was controlled by t
Externí odkaz:
https://doaj.org/article/5dde50f01b854d099743b393284a7fd0
Publikováno v:
Materials Science Forum. 1062:3-7
Impurity incorporation during vapor-phase epitaxy on stepped surfaces was modeled by classifying rate-limiting processes into i) surface diffusion, ii) step kinetics, and iii) segregation. Examples were shown for i) desorption-limited Al incorporatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::030472292363d5e7d2ab17453934ebe0
https://doi.org/10.4028/p-9bg88x
https://doi.org/10.4028/p-9bg88x
Autor:
Noboru Fukuhara, Fumimasa Horikiri, Taiki Yamamoto, Takenori Osada, Kenji Kasahara, Takayuki Inoue, Takashi Egawa
Publikováno v:
Journal of Applied Physics. 133:085702
The frequency dispersion in admittance measurements in AlGaN/GaN high-electron-mobility transistors, which is typically interpreted to result from an interface trap density Dit, is also known to be caused by effects other than Dit. To study the origi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::632ce9bfbb7074e77441b1444d3f37e7
https://doi.org/10.1063/5.0127499
https://doi.org/10.1063/5.0127499
Autor:
Hiroki Imabayashi, Yuto Yasui, Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara, Tomoyoshi Mishima, Kenji Shiojima
Publikováno v:
Japanese Journal of Applied Physics. 62:SA1012
We applied scanning internal photoemission microscopy (SIPM) to clarify the electrical characteristics on the electrode periphery of Ni/n-GaN Schottky contacts. Two types of Schottky contacts with different electrode formation methods were prepared.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::562a738f115bc9ee7b529673edc38d5d
https://doi.org/10.35848/1347-4065/ac8d6f
https://doi.org/10.35848/1347-4065/ac8d6f
Autor:
Yoshinobu Narita, Naomi Asai, Takehiro Yoshida, Tomoyoshi Mishima, Noboru Fukuhara, Hiroshi Ohta, Fumimasa Horikiri, Kazuki Miwa, Masachika Toguchi, Taketomo Sato
Publikováno v:
IEEE transactions on semiconductor manufacturing. 32(4):489-495
Photoelectrochemical (PEC) etching was used to fabricate deep trench structures in GaN-on-GaN epilayers grown on n-GaN substrates. The width of the side etching was less than $1~\mu \text{m}$ , with high accuracy. The aspect ratio (depth/width) of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a99f6238520b3c637b540d12db563b73
http://hdl.handle.net/2115/76692
http://hdl.handle.net/2115/76692
Autor:
Hiroshi Ohta, Naomi Asai, Kazuhiro Mochizuki, Fumimasa Horikiri, Yoshinobu Narita, Tomoyoshi Mishima
Publikováno v:
Japanese Journal of Applied Physics. 61:061009
The characteristics of p-n junction diodes on heavily Ge-doped substrates were compared with those on conventional Si-doped substrates. A large decrease in on-resistance was observed which greatly exceeded the component due to the lower resistance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d81d3be8b708a98da053e4b0c448e8e
https://doi.org/10.35848/1347-4065/ac66b1
https://doi.org/10.35848/1347-4065/ac66b1
Publikováno v:
Japanese Journal of Applied Physics. 61:058001
Influences of hole traps on large forward current (I F) of GaN p+n diodes on low-dislocation-density (≤4 × 105 cm−2) GaN substrates were numerically investigated. As with the reported simulation of GaAs p+n diodes, hole traps were found to incre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e90edffeb3f16d036e67a0a2dd774b5b
https://doi.org/10.35848/1347-4065/ac61f3
https://doi.org/10.35848/1347-4065/ac61f3
Autor:
Ryo Matsuda, Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Noboru Fukuhara, Tomoyoshi Mishima, Kenji Shiojima
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0636c27fa2931f54b66a089fea67a56f
https://doi.org/10.7567/ssdm.2020.d-2-06
https://doi.org/10.7567/ssdm.2020.d-2-06
Autor:
Hiroshi Ohta, Naomi Asai, Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Tomoyoshi Mishima
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a82d77ef0255c34a2de902a482ee147
https://doi.org/10.7567/ssdm.2020.d-2-04
https://doi.org/10.7567/ssdm.2020.d-2-04
Autor:
Kenji Shiojima, Ryo Matsuda, Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara, Tomoyoshi Mishima
Publikováno v:
Japanese Journal of Applied Physics. 61:SC1059
We present the experimental results on the mapping characterization of n-type GaN Schottky contacts with selective contactless photoelectrochemical (CL-PEC) etching by using scanning internal photoemission microscopy (SIPM). The CL-PEC etching was pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78cbef60b37972857dd6d4d2a2581ac3
https://doi.org/10.35848/1347-4065/ac4c6e
https://doi.org/10.35848/1347-4065/ac4c6e