Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Fumikazu Murakami"'
Autor:
Fumikazu Murakami, Atsushi Takeo, Brandon Mitchell, Volkmar Dierolf, Yasufumi Fujiwara, Masayoshi Tonouchi
Publikováno v:
Communications Materials, Vol 4, Iss 1, Pp 1-10 (2023)
Abstract Eu-doped Gallium nitride (GaN) is a promising candidate for GaN-based red light-emitting diodes, which are needed for future micro-display technologies. Introducing a superlattice structure comprised of alternating undoped and Eu-doped GaN l
Externí odkaz:
https://doaj.org/article/9b4134d406ee46809b3c2d2bbb9cce4f
Publikováno v:
Light: Science & Applications, Vol 11, Iss 1, Pp 1-12 (2022)
In this paper, the THz emission properties from Si wafers with different surface conditions and doping conditions have been concluded, which show the potential application of LTEM on surface estimation
Externí odkaz:
https://doaj.org/article/43e83e6a9244437b8405c870949eda45
Autor:
Fumikazu Murakami, Kazunori Serita, Iwao Kawayama, Hironaru Murakami, Kingshuk Bandopadhyay, Andrzej Materna, Augustine M. Urbas, Dorota A. Pawlak, Masayoshi Tonouchi
Publikováno v:
APL Materials, Vol 11, Iss 3, Pp 031102-031102-9 (2023)
Bismuth telluride (Bi2Te3)-based heterostructures have attracted considerable attention owing to their interesting anisotropic properties and expected higher thermoelectric performance. Therefore, exploring the nature of the carrier dynamics in these
Externí odkaz:
https://doaj.org/article/dc0b63c4733245a1b223b11d8aea743d
Autor:
Abdul Mannan, Ryotaro Inoue, Fumikazu Murakami, Kazunori Serita, Hironaru Murakami, Masayoshi Tonouchi
Publikováno v:
AIP Advances, Vol 11, Iss 12, Pp 125021-125021-6 (2021)
We studied the phased-array effects in terahertz emission from semiconductor surfaces upon femtosecond laser illumination. A finite-difference time-domain simulation and experimental observation of the radiation patterns were utilized to examine the
Externí odkaz:
https://doaj.org/article/8ee60c695e34470daffb3c5f4cd031f6
Autor:
Kazunori Yokohata, Hiroyuki Yamamoto, Satoru Kawamoto, Miho Shigeoka, Akiko Shinagawa, Noriko Oki, Hiroyuki Iwakawa, Tadashi Kusakari, Fumikazu Murakami
Publikováno v:
Japanese Journal of Transfusion and Cell Therapy. 68:408-411
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be984f9e8a1cd4339d223b218aea4524
https://doi.org/10.3925/jjtc.68.408
https://doi.org/10.3925/jjtc.68.408
Publikováno v:
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a53419c8572e7daad503f51c656677f0
https://doi.org/10.1109/irmmw-thz50927.2022.9895543
https://doi.org/10.1109/irmmw-thz50927.2022.9895543
Autor:
Kristof J. P. Jacobs, Masayoshi Tonouchi, Hironaru Murakami, Kazunori Serita, Eric Beyne, Fumikazu Murakami
Publikováno v:
Nature Electronics. 4:202-207
Three-dimensional (3D) complementary metal–oxide–semiconductor (CMOS) integration could enable device scaling beyond the limits of conventional 2D CMOS technology. Such integration requires vertical electrical connections that pass through silico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5e18b7b65f5616f81e9defb6495f49f
https://doi.org/10.1038/s41928-021-00559-z
https://doi.org/10.1038/s41928-021-00559-z
Publikováno v:
Applied Physics Letters. 122:041601
This study conducted laser-induced terahertz emission spectroscopy on a VO2/Si heterojunction. Consequently, rapid estimation of the local interface potential was realized and the work function of VO2 was obtained as 5.17–5.25 eV with increasing te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa999b528705bd845ca71fbd462bf64e
https://doi.org/10.1063/5.0136610
https://doi.org/10.1063/5.0136610
Autor:
Kazunori Serita, Hao Jiang, Masayoshi Tonouchi, Fumikazu Murakami, Chen Gong, Hironaru Murakami, Ke Wang
Publikováno v:
2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).
Gallium oxide are a potential material for many applications and recent research showed its strong anisotropic properties in THz range. We applied THz-TDS and CW laser to study the excited carrier dynamics in our sample (Ga 2 O 3 , 010, Fe-doped). Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad3957d1b653b4e6402d9b8a62056afd
https://doi.org/10.1109/irmmw-thz50926.2021.9567220
https://doi.org/10.1109/irmmw-thz50926.2021.9567220
Publikováno v:
Journal of Applied Physics. 131:185706
We report the terahertz emission spectroscopy (TES) and photoluminescence (PL) spectroscopy results for a semi-insulating (SI) GaN film in comparison with those for unintentionally doped (UID) and magnesium (Mg)-doped ones. The TES and PL results sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb5ac3413a5310e00977dff5b79b7d50
https://doi.org/10.1063/5.0086788
https://doi.org/10.1063/5.0086788