Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Fumihisa Kano"'
Publikováno v:
IEEJ Transactions on Electrical and Electronic Engineering. 16:1229-1238
Autor:
Tatsuya Hinoki, Fumihisa Kano, Sosuke Kondo, Yoshiyuki Kawaharada, Yumiko Tsuchiya, Moonhee Lee, Hiroyuki Sakai
Publikováno v:
Coatings; Volume 12; Issue 5; Pages: 623
Silicon carbide composites are expected for light water reactors. The objective is to understand the steam oxidation behavior and the high-temperature water corrosion behavior of the liquid phase sintering silicon carbide and to develop the liquid ph
Publikováno v:
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia).
This paper proposes a buck-boost type MPPT circuit suitable for photovoltaic generation of solar car. By using an analog circuit for MPPT control, high conversion efficiency and weight reduction could be achieved by an accurate maximum power point tr
Autor:
Fumihisa KANO, Akio KAWAI
Publikováno v:
Journal of the Japan Welding Society. 69:577-581
Publikováno v:
Materia Japan. 45:219-221
Autor:
Yu, Jianding, Paradis, Paul-Francois, Ishikawa, Takehiko, Yoda, Shinichi, Saita, Yutaka, Itoh, Mitsuru, Fumihisa, Kano
Publikováno v:
Chemistry of Materials. 16(21):3973-3975
Oxygen-deficient h-BaTiO3 synthesized by noncontact processing exhibits a dielectric constant higher than 100 000 with a loss component of about 0.1 together with a weak temperature dependence in the range of 100 to 300 K. Dielectric constant dramati
Publikováno v:
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials.
Autor:
Fumihisa Kano
Publikováno v:
Materia Japan. 47:621-621
Publikováno v:
Materia Japan. 43:1038-1038
Autor:
Takefumi Shimoguchi, Hironobu Takahashi, Shuji Satou, Shin‐ici Motoyama, Fumihisa Kano, Shigeo Kaneda, Yokoyama Meiso
Publikováno v:
Journal of Applied Physics. 64:3945-3948
Crystal characterization by photoluminescence and x‐ray diffraction has been performed to find out the optimum growth condition of ZnS grown by the gas‐source molecular‐beam‐epitaxial (MBE) method. In this crystal growth, important parameters