Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Fumie Kikushima"'
Autor:
Tomoya Sanuki, Yuta Aiba, Hitomi Tanaka, Takashi Maeda, Keiichi Sawa, Fumie Kikushima, Masayuki Miura
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 2, Pp 159-167 (2021)
This report introduces the cryogenic operation and storage performance of 3-D flash memory. The cell transistor characteristics and the basic functionalities, including read and program and erase (P/E) operations, are investigated at an extremely low
Externí odkaz:
https://doaj.org/article/d83c8c1651be492ab058361534c9d449
Autor:
Takashi Maeda, Hitomi Tanaka, Masayuki Miura, Keiichi Sawa, Yuta Aiba, Fumie Kikushima, Tomoya Sanuki
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 2, Pp 159-167 (2021)
This report introduces the cryogenic operation and storage performance of 3-D flash memory. The cell transistor characteristics and the basic functionalities, including read and program and erase (P/E) operations, are investigated at an extremely low
Autor:
Hitomi Tanaka, Yuta Aiba, Takashi Maeda, Kensuke Ota, Yusuke Higashi, Keiichi Sawa, Fumie Kikushima, Masayuki Miura, Tomoya Sanuki
Publikováno v:
2022 IEEE International Memory Workshop (IMW).
Autor:
Keiichi Sawa, Takashi Maeda, Masayuki Miura, Fujisawa Toshio, Mie Matsuo, Hideko Mukaida, Hideto Horii, Tomoya Sanuki, Fumie Kikushima, Hitomi Tanaka, Yuta Aiba
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
We propose the storage systems incorporating 3D Flash memory in a cryogenic condition. In this paper, we investigate details of the cell characteristics and storage performance at cryogenic temperature. Several new results are obtained in addition to
Autor:
Yuta Aiba, Fumie Kikushima, Tomoya Sanuki, Keiichi Sawa, Takashi Maeda, Mie Matsuo, Masayuki Miura, Fujisawa Toshio, Hitomi Tanaka
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
This report is the first to introduce a cryogenic operation and characteristics of 3D Flash memory at 77 K in the liquid nitrogen. It was found that read, program and erase operations were fully functional. The read noise was significantly minimized
Autor:
Katsuyuki Sekine, Kazuhiro Matsuo, Wataru Sakamoto, Fumitaka Arai, Fumie Kikushima, Tetsuya Kamigaki
Publikováno v:
2014 IEEE 6th International Memory Workshop (IMW).
Anisotropic Inter-Poly Dielectric (AIS IPD) has been successfully developed. It enables center SiN thickness to be thicker at Floating-Gate (FG) top and thinner at FG side. Using AIS IPD, both programming speed and program saturation threshold voltag