Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Fumiaki Hyuga"'
Publikováno v:
Journal of Applied Physics. 84:5614-5620
Annealing effects on the electrical and optical characteristics of GaAs/InGaP/n+InGaAs:Si/GaAs epilayers grown on GaAs semi-insulating substrates by metal organic chemical vapor deposition have been investigated. This epilayer structure has been used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e769f56249386ddf44a6c192c8c9b9af
https://doi.org/10.1063/1.368861
https://doi.org/10.1063/1.368861
Publikováno v:
Microelectronics Reliability. 37:1659-1662
This paper discusses the reliability of three-dimensional Au WSiN interconnections buried in a polyimide layer. Temperature cycle tests and bias stress tests reveal that high stability of this system. It is found that the enhanced degradation occurs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0eaad4575f7a91a6546325f302f87652
https://doi.org/10.1016/s0026-2714(97)00133-9
https://doi.org/10.1016/s0026-2714(97)00133-9
Autor:
Fumiaki Hyuga, Takumi Nittono
Publikováno v:
Journal of Applied Physics. 81:2607-2610
InGaP/GaAs heterointerfaces grown by metalorganic chemical vapor deposition have been characterized by a high-resolution x-ray diffraction analysis of multiple quantum well structures. The flow of AsH3 to InGaP surface produces an InGaAs-like interfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::620eebfe0057dd8fd052a95efe176d44
https://doi.org/10.1063/1.364297
https://doi.org/10.1063/1.364297
Autor:
Fumiaki Hyuga, Takumi Nittono
Publikováno v:
Journal of Crystal Growth. 170:762-766
The effect of treating the substrate prior to epitaxial growth has been studied for the purpose of reducing unintentional impurities at the interface between epitaxial layers and GaAs substrates. It was found that treatment in HF or HCl solutions red
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17da57487fe87a72773d98f2ecb19741
https://doi.org/10.1016/s0022-0248(96)00505-2
https://doi.org/10.1016/s0022-0248(96)00505-2
Autor:
Yi-Ming Xiong, Kenichi Watanabe, Cheong Chee Wong, Kenichiro Kobayashi, Tadashi Saitoh, Fumiaki Hyuga
Publikováno v:
Thin Solid Films. 270:97-102
Spectroscopic ellipsometry (SE), a non-destructive optical method, was used for the characterization of In0.48Ga0.52P-based thin-layer structures. Two types of sample structures were investigated. One was an In0.48Ga0.52P-based single-layer structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72ea588256031f8bca25eb925177980e
https://doi.org/10.1016/0040-6090(95)06891-0
https://doi.org/10.1016/0040-6090(95)06891-0
Publikováno v:
Journal of Applied Physics. 78:5939-5944
We investigate the effect of Si ion implantation and subsequent rapid thermal annealing (RTA) on the homogeneity of the crystal quality of metalorganic chemical‐vapor‐deposited GaAs (150 A)/InGaP (100 A)/n+InGaAs:Si (150–200 A)/GaAs (800 A) epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3ae5329fa3afcae96be2b1eead923ef
https://doi.org/10.1063/1.360596
https://doi.org/10.1063/1.360596
Publikováno v:
Journal of Applied Physics. 78:5387-5390
Growth conditions of metalorganic chemical vapor deposition have been investigated for the purpose of obtaining abrupt InGaP/GaAs interfaces. Photoluminescence (PL) spectra of InGaP/GaAs quantum wells (QWs) are used to characterize these interfaces.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5d5f7549c34e265d3ee95fadc2f605c
https://doi.org/10.1063/1.359718
https://doi.org/10.1063/1.359718
Publikováno v:
Journal of Applied Physics. 78:1793-1797
Results are presented on the use of metalorganic chemical‐vapor deposition (CVD)‐grown InGaP lattice matched to GaAs as part of a capping scheme to protect an n+GaAs epilayer during high‐temperature annealing. Such an epilayer structure is impo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb1830e6f252a0f2f19302a67efa23c7
https://doi.org/10.1063/1.360210
https://doi.org/10.1063/1.360210
Publikováno v:
Journal of The Electrochemical Society. 138:2815-2820
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::225f070b6262dcf8e86620c7cf04fd4e
https://doi.org/10.1149/1.2086063
https://doi.org/10.1149/1.2086063
Publikováno v:
Applied Physics Letters. 73:372-374
Carrier concentration (N) in the channel layers of pseudomorphic In0.5Ga0.5P/In0.2Ga0.8As/GaAs heterostructure field-effect transistors (HFETs) is evaluated by Raman scattering measurements. The coupled mode between the InGaAs longitudinal optical ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a94b4a7aa4a02def37c2abdbaa0d7b6a
https://doi.org/10.1063/1.121838
https://doi.org/10.1063/1.121838