Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Fulong Jiang"'
Autor:
Chaudhry Muhammad Furqan, Muhammad Umair Khan, Muhammad Awais, Fulong Jiang, Jinho Bae, Arshad Hassan, Hoi-Sing Kwok
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-14 (2021)
Abstract Gallium Nitride (GaN) remarkably shows high electron mobility, wide energy band gap, biocompatibility, and chemical stability. Wurtzite structure makes topmost Gallium atoms electropositive, hence high ligand binding ability especially to an
Externí odkaz:
https://doaj.org/article/3a822eb974634b5f871de4a7c3039c32
Autor:
Jianming Lei, Rui Wang, Guo Yang, Jin Wang, Fulong Jiang, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 690-695 (2019)
A double-diode-isolation method with low parasitic capacitance devices and reverse clamping is proposed to accurately extract the high-frequency and high-voltage dynamic on-resistance ( $R_{\mathrm{ dson}}$ ) of AlGaN/GaN high electron mobility trans
Externí odkaz:
https://doaj.org/article/2ae864ef162641c9a493f2c056ae5aca
Autor:
Fulong Jiang, Yaying Liu, Menghan Liu, Ningze Zhuo, Peng Gao, Huajie Fang, Peng Chen, Bin Liu, Xiangqian Xiu, Zili Xie, Ping Han, Yi Shi, Rong Zhang, Youdou Zheng
Publikováno v:
IEEE Photonics Journal, Vol 10, Iss 2, Pp 1-9 (2018)
We have fabricated the InGaN/AlGaInN multiple quantum wells with lattice-matched AlGaN/InGaN superlattices barriers (SL-MQWs). The lattice-matched superlattices promote the formation of the high-quality MQWs and eliminate the large polarization elect
Externí odkaz:
https://doaj.org/article/4a55f854a4624bd5a7b7bbf79dfcd1a9
Publikováno v:
Optics express. 29(16)
The role of a superlattice distributed Bragg reflector (SL DBR) as the p-type electron blocking layer (EBL) in a GaN micro-light-emitting diode (micro-LED) is numerically investigated to improve wall-plug efficiency (WPE). The DBR consists of AlGaN/G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0fe1277c66e7caeb8fd1f7a9cadb627
https://pubmed.ncbi.nlm.nih.gov/34614935
https://pubmed.ncbi.nlm.nih.gov/34614935
Publikováno v:
Journal of Physics D: Applied Physics. 55:315107
In this paper, the GaN-based green micro light-emitting diodes (Micro-LEDs) with various sizes (from 3 to 100 μm) were fabricated and electro-optically characterized. Atom layer deposition (ALD) passivation and potassium hydroxide (KOH) treatment we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::506065143b2686ae8ebdc6f1ad136748
https://doi.org/10.1088/1361-6463/ac6cb4
https://doi.org/10.1088/1361-6463/ac6cb4
Autor:
Chaudhry Muhammad Furqan, Hoi-Sing Kwok, Arshad Hassan, Jinho Bae, Muhammad Awais, Fulong Jiang, Muhammad Umair Khan
Publikováno v:
Scientific Reports
Scientific Reports, Vol 11, Iss 1, Pp 1-14 (2021)
Scientific Reports, Vol 11, Iss 1, Pp 1-14 (2021)
Gallium Nitride (GaN) remarkably shows high electron mobility, wide energy band gap, biocompatibility, and chemical stability. Wurtzite structure makes topmost Gallium atoms electropositive, hence high ligand binding ability especially to anions, mak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15ca60153698a0c85b1bca9e89f9028c
https://pubmed.ncbi.nlm.nih.gov/34045509
https://pubmed.ncbi.nlm.nih.gov/34045509
Autor:
Guo Yang, Jin Wang, Youdou Zheng, Dunjun Chen, Lei Jianming, Fulong Jiang, Rui Wang, Rong Zhang, Hai Lu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 690-695 (2019)
A double-diode-isolation method with low parasitic capacitance devices and reverse clamping is proposed to accurately extract the high-frequency and high-voltage dynamic on-resistance ( $R_{\mathrm{ dson}}$ ) of AlGaN/GaN high electron mobility trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5db3068c6ab654b37069373b03210424
https://doi.org/10.1109/jeds.2019.2927608
https://doi.org/10.1109/jeds.2019.2927608
Publikováno v:
Optics Express. 30:10119
An investigation of electrical and optical properties of InGaN micro-scale light-emitting diodes (micro-LEDs) emitting at ∼530 nm is carried out, with sizes of 80, 150, and 200 µm. The ITO as a current spreading layer (CSL) provides excellent devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2601de0a38ef260bf57a9ec82f298eec
https://doi.org/10.1364/oe.451509
https://doi.org/10.1364/oe.451509
Autor:
Peng Chen, Menghan Liu, Xiangqian Xiu, Yi Shi, Bin Liu, Peng Gao, Zili Xie, Ya-Ying Liu, Ningze Zhuo, Ping Han, Youdou Zheng, Huajie Fang, Fulong Jiang, Rong Zhang
Publikováno v:
IEEE Photonics Journal. 10:1-9
We have fabricated the InGaN/AlGaInN multiple quantum wells with lattice-matched AlGaN/InGaN superlattices barriers (SL-MQWs). The lattice-matched superlattices promote the formation of the high-quality MQWs and eliminate the large polarization elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49eac311accdef5781a7dd6cdcf591c7
https://doi.org/10.1109/jphot.2018.2820692
https://doi.org/10.1109/jphot.2018.2820692
Publikováno v:
SID Symposium Digest of Technical Papers. 50:807-809
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb075b99a55bc86781af25feb0f5b5d0
https://doi.org/10.1002/sdtp.13655
https://doi.org/10.1002/sdtp.13655