Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Fukada Keisuke"'
Hydrogel‐Sheathed hiPSC‐Derived Heart Microtissue Enables Anchor‐Free Contractile Force Measurement.
Autor:
Kurashina, Yuta1,2 (AUTHOR), Fukada, Keisuke3 (AUTHOR), Itai, Shun1,4 (AUTHOR), Akizuki, Shuichi5 (AUTHOR), Sato, Ryo3 (AUTHOR), Masuda, Akari3 (AUTHOR), Tani, Hidenori6 (AUTHOR), Fujita, Jun6,7 (AUTHOR), Fukuda, Keiichi6 (AUTHOR), Tohyama, Shugo6 (AUTHOR) shugotohyama@keio.jp, Onoe, Hiroaki1 (AUTHOR) onoe@mech.keio.ac.jp
Publikováno v:
Advanced Science. Dec2023, Vol. 10 Issue 35, p1-12. 12p.
Akademický článek
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Akademický článek
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Autor:
Hiroshi Osawa, Fukada Keisuke, Ling Guo, Ishibashi Naoto, Koji Kamei, Kenji Momose, Y. Mabuchi, Yoshitaka Nishihara
Publikováno v:
Materials Science Forum. 924:67-71
SiC-powered devices which reduce the power loss, size, and weight of power converters are gradually appearing in the power electronics market. From now on, cost reduction and quality improvement of SiC epitaxial wafers is required to further increase
Publikováno v:
Materials Science Forum. 897:55-58
This paper presents a high-quality 100/150 mm p-type 4H-SiC epitaxial wafer prepared by chemical vapor deposition; this wafer is suitable for high-voltage bipolar device applications. The density of killer defects for bipolar devices including downfa
Autor:
Akira Bandoh, Fukada Keisuke, Hiroshi Osawa, Yoshihiko Miyasaka, Ishibashi Naoto, Kenji Momose
Publikováno v:
Materials Science Forum. 897:83-86
The depth profiles of n-type doping concentration in thick (>100 μm) and low-doped (< 4 × 1014 cm-3) 4H-SiC epilayers grown by chemical vapor deposition (CVD) were investigated. The variation in doping concentration during epitaxial growth are cons
Autor:
Masahiko Ito, Hiroaki Fujibayashi, Hitoshi Osawa, Hidekazu Tsuchida, Masami Naitou, Fukada Keisuke, Takahiro Kozawa, Hideyuki Uehigashi, Isaho Kamata, Kazukuni Hara
Publikováno v:
Materials Science Forum. 858:173-176
We have developed a single-wafer vertical epitaxial reactor which realizes high-throughput production of 4H-SiC epitaxial layer (epilayer) with a high growth rate [1,2]. In this paper, in order to evaluate the crystalline defects which can affect the
Autor:
Fukada Keisuke, Kazukuni Hara, Hideyuki Uehigashi, Hiroaki Fujibayashi, Masahiko Ito, Sugiura Toshikazu, Masami Naitou, Hidekazu Tsuchida, Takahiro Kozawa, Hitoshi Osawa, Isaho Kamata, Tetsuya Miyazawa
Publikováno v:
Materials Science Forum. 858:119-124
This paper reports on recent advances in 4H-SiC epitaxial growth toward high-throughput production of high-quality and uniform 150 mm-diameter 4H-SiC epilayers by enhancing of growth rates, improving uniformity and reducing defect densities. A vertic
Autor:
Yuji Osawa, Hiroshi Osawa, Taichi Okano, Michiya Odawara, Jun Norimatsu, Takayuki Sato, Akira Miyasaka, Daisuke Muto, Yutaka Tajima, Fukada Keisuke, Yoshiaki Kageshima, Kenji Momose
Publikováno v:
Materials Science Forum. :193-196
The production of 150 mm-diameter SiC epitaxial wafers is the key to the spread of SiC power devices. We have developed production technology of the epitaxial growth for 4° off Carbon face (C-face) 4H-SiC epitaxial layers on 150 mm diameter substrat
Autor:
Yuji Osawa, Takayuki Sato, Daisuke Muto, Fukada Keisuke, Akira Miyasaka, Taichi Okano, Yutaka Tajima, Jun Norimatsu, Hiroshi Osawa, Kimura Yusuke, Kenji Momose, Michiya Odawara
Publikováno v:
Materials Science Forum. :197-200
The production of 150 mm-diameter SiC epi-wafers is the key to the spread of SiC power devices. Besides, step-bunching free surface leads to high-performance devices. We have developed the production technology of the epitaxial growth with smooth sur