Zobrazeno 1 - 10
of 332
pro vyhledávání: '"Fujiwara, Kozo"'
Misorientation increase of small-angle grain boundaries during directional solidification of silicon
Publikováno v:
In Journal of Crystal Growth 15 October 2024 644
Dislocation interaction with vicinally faceted groove at grain boundary in multi-crystalline silicon
Autor:
Yang, Fan, Chuang, Lu-Chung, Maeda, Kensaku, Nozawa, Jun, Morito, Haruhiko, Fujiwara, Kozo, Duffar, Thierry
Publikováno v:
In Journal of Crystal Growth 1 August 2024 639
Autor:
Mishra, Shashank Shekhar, Chuang, Lu-Chung, Nozawa, Jun, Maeda, Kensaku, Morito, Haruhiko, Fujiwara, Kozo, Duffar, Thierry
Publikováno v:
In Scripta Materialia 1 July 2024 247
Autor:
Mishra, Shashank Shekhar, Chuang, Lu-Chung, Maeda, Kensaku, Nozawa, Jun, Morito, Haruhiko, Duffar, Thierry, Fujiwara, Kozo
Publikováno v:
In Journal of Crystal Growth 1 February 2024 627
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Mishra, Shashank Shekhar, Chuang, Lu-Chung, Maeda, Kensaku, Nozawa, Jun, Morito, Haruhiko, Fujiwara, Kozo
Publikováno v:
In Journal of Crystal Growth 1 September 2022 593
Publikováno v:
In Journal of Crystal Growth 15 May 2022 586
Publikováno v:
In Scripta Materialia 1 April 2022 211
Autor:
Shiga, Keiji, Takahashi, Atsuko, Chuang, Lu-Chung, Maeda, Kensaku, Morito, Haruhiko, Fujiwara, Kozo
Publikováno v:
In Journal of Crystal Growth 1 January 2022 577
Publikováno v:
High Temperature Materials and Processes, Vol 41, Iss 1, Pp 31-47 (2022)
A fundamental understanding of crystal growth dynamics during directional solidification of multicrystalline Si (mc-Si) is crucial for the development of crystal growth technology for mc-Si ingots for use in solar cells. In situ observation of the cr
Externí odkaz:
https://doaj.org/article/df13ab30343c4e728e5e1fe477d2417a