Výsledky vyhledávání - "Fujiwara, Kenzo"

Ultra-low frequency photocurrent self-oscillation in strained InxGa1-xAs quantum well diodes

Autor: Tanigawa, K, Fujiwara, Kenzo, Sano, N

Publikováno v: Journal of Crystal Growth. :902-905

Ultra-low frequency photocurrent (PC) self-oscillation has been investigated in aIn0.15Ga0.85As/Al0.15Ga0.85As quantum-well (QW) diode in details as a function of temperature,excitation power and wavelength. The PC oscillation frequency increases wit

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Anti-Stokes photoluminescence between Inx(Al0.17Ga0.83)1-xAs/ Al0.17Ga0.83As quantum wells with different x values

Autor: Machida, S, Takakuma, T, Fujiwara, kenzo

Publikováno v: Physica E: Low-dimensional Systems and Nanostructures. 33(1):196-200

Anti-Stokes photoluminescence (AS-PL) has been investigated in a step-gradedInx(Al0.17Ga0.83)1-xAs/Al0.17Ga0.83As quantum well (QW) system consisting of five QWs with different xvalues. When a low-energy heavy-hole (1s) exciton state in a particular

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Akademický článek

Electron orbital energies of H2S and H2O chemisorbed on the Si(111) 7×7 surface.

Autor: Fujiwara, Kenzo

Publikováno v: Journal of Chemical Physics; Nov1981, Vol. 75 Issue 10, p5172-5178, 7p

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Akademický článek

Enhanced anticrossing in an asymmetric double-well GaAs/AlAs superlattice with two kinds of...

Autor: Kawashima, Kenji, Fujiwara, Kenzo

Publikováno v: Journal of Applied Physics; 11/1/1998, Vol. 84 Issue 9, p5064, 6p

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Akademický článek

Light power dependence of electro-optical transmission in InGaAs/AlGaAs multiple quantum wells.

Autor: Giugni, Stephen, Kawashima, Kenji, Sano, Naokatsu, Fujiwara, Kenzo

Publikováno v: Journal of Applied Physics; 12/15/1992, Vol. 72 Issue 12, p5555, 6p, 2 Diagrams, 10 Graphs

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Akademický článek

Application of AlAs-GaAs superlattices to step-index and graded-index waveguide separate-confinement heterostructure laser diodes.

Autor: Tokuda, Yasunori, Ohta, Yasumi N., Fujiwara, Kenzo, Nakayama, Takashi

Publikováno v: Journal of Applied Physics; 10/15/1986, Vol. 60 Issue 8, p2729, 6p, 2 Black and White Photographs, 1 Diagram, 1 Chart, 4 Graphs

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Low-energy electron-beam irradiation of GaN-based quantum well structures

Autor: Jahn, U, Dhar, S, Kostial, H, Watson, I.M, Fujiwara, Kenzo

Publikováno v: physica status solidi (c). (7):2223-2226

The electronic properties of (In,Ga)N/GaN quantum wells fabricated by MOCVD depend significantly onlow-energy electron-beam irradiation (LEEBI), e. g., during cathodoluminescence (CL) investigations,when a certain exposure dose is exceeded. For unint

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https://kyutech.repo.nii.ac.jp/records/148

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Dynamical transport of photoexcited carriers between shallow and deep quantum wells embedded in a GaAs/AlAs superlattice

Autor: Satake, Akihiro, Ikemoto, T, Fujiwara, kenzo, Schrottke, L, Hey, R, Grahn, H.T.

Publikováno v: Physica E: Low-dimensional Systems and Nanostructures. 13(2-4):711-714

Temperature dependence of the emission properties in a novel compositequantum-well-structure consisting of wide and narrow GaAs quantum wells (QWs) embeddedin a GaAs/AlAs short-period superlattice (SPS) has been studied by steady-state andtime-resolv

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