Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Fujita Ryuusei"'
Publikováno v:
Materials Science Forum. 897:214-217
We present a model to explain forward voltage degradation of body diode in 4H-SiC MOSFET, and evaluate the velocity of SF expansion. First, by using in-situ photoluminescence (PL) observation, we investigated how a stacking fault (SF) expands from a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a08fea1080a71caf8c411e17e600c2b8
https://doi.org/10.4028/www.scientific.net/msf.897.214
https://doi.org/10.4028/www.scientific.net/msf.897.214
Autor:
Takashi Ishigaki, Akio Shima, Yasuhiro Shimamoto, Haruka Shimizu, Fujita Ryuusei, Masakazu Sagawa, Yuki Mori, Shintaroh Sato, Naoki Tega, Kenji Kobayashi, Kumiko Konishi
Publikováno v:
Materials Science Forum. 897:493-496
We investigated improvement ways of to overcome these reliability issues in a 3.3 kV 4H-SiC DMOSFET. JFET doping with (i) narrow width and (ii) deeper depth than that of the p-well region successfully reduced the electric field in the gate insulator
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6f6b7ee5aec130834f9ea83cb4b797d
https://doi.org/10.4028/www.scientific.net/msf.897.493
https://doi.org/10.4028/www.scientific.net/msf.897.493
Autor:
Tatsunori Murata, Kumiko Konishi, Yuki Mori, Takahiro Morikawa, Koyo Kinoshita, Tetsuo Oda, Fujita Ryuusei, Takashi Ishigaki, Akio Shima
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
We have developed a 3.3 kV ultra-high power density SiC power module, which was realized by fulfilment with only SiC-MOSFETs. As a countermeasure for bipolar degradation issues related to body diodes in the MOSFET structure, a high throughput screeni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0966216ebbe97bd734b27d73995a223f
https://doi.org/10.1109/ispsd.2019.8757598
https://doi.org/10.1109/ispsd.2019.8757598