Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Fujio Okumura"'
Autor:
Shinji Kasahara, So Nishimura, Kenji Tagami, Ishikawa Takashi, Noriyoshi Hiroi, Takeshi Honda, Kazuhiko Aoki, Fujio Okumura, Nobuaki Takanashi, Osamu Ishibashi, Masahiko Ohta, Takeo Nozaki, Yoshiho Yanagita, Hiroshi Imai
Publikováno v:
SID Symposium Digest of Technical Papers. 43:977-980
A bright direct view laser phosphor display with a large scanning angle has been developed. A scan mirror, to which a dielectric multilayer was applied on a glass substrate, achieved over 99% reflectivity and withstands large laser power. An optical
Publikováno v:
SID Symposium Digest of Technical Papers. 42:547-550
A metal based optical scanner for non-resonant drive has been developed. A thin magnet, installed beneath a scan mirror, drives the mirror over +/−20 degrees of optical angle. The moving magnet actuator's large torque enables designing the torsion
Autor:
Ichiro Fujieda, Hiroshi Haga, Fujio Okumura, Yasuyoshi Matsumoto, Hiroshi Kohashi, Hiroshi Matsuo, Shigeki Miura
Publikováno v:
Color and Imaging Conference. 5:131-135
Autor:
Kazuyuki Nakamura, Setsuo Kaneko, Kazunori Ozawa, Hiroshi Tanabe, K. Hamada, Kenji Sera, K. Mochizuki, Hideki Asada, S. Saitoh, Kazumi Hirata, Fujio Okumura, S. Ohi
Publikováno v:
1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.
The rapid progress of multimedia demands liquid crystal display (LCD) projectors that can display computer data, such as video-graphic arrays (VGA), super-video-graphic arrays (SVGA), extended-graphic arrays (XGA) and super-extended-graphic arrays (S
Publikováno v:
Proceedings of 1994 IEEE International Electron Devices Meeting.
Low-temperature processed polysilicon thin-film-transistors have shown negative threshold voltage shift under gate bias stress. This shift was produced as a result of the positive charge created by water penetration and by the subsequent field activa
Publikováno v:
Laser Applications in Microelectronic and Optoelectronic Manufacturing IV.
The lattice strain in excimer laser crystallized polycrystalline Si (poly-Si) thin films reflects the grain growth induced by thelaser irradiation. In this report, the measurement of the lattice strain is made by using the energy-dispersive grazing-i
Publikováno v:
MRS Proceedings. 508
Lowering process temperatures for polysilicon thin-film-transistors (TFTs) has given rise to new worries about the quality of TFT gate oxides. Specifically, presence of large amounts of SiOH bonds in gate oxides has become a matter of concern. We dis
Publikováno v:
Solid State Sensor Arrays: Development and Applications.
A compact imaging system is proposed for electronic document input. In this configuration, a linear image sensor formed on a glass substrate is coupled with a optical fiber array plate (FAP). There are multiple apertures in each photodiode of this se
Publikováno v:
MRS Proceedings. 377
This paper describes the excimer laser annealed (ELA) poly-Si TFT technologies in terms of excimer laser annealing of Si films, the leakage current, and the TFT stability. A laser energy density and a shot dependencies of TFT characteristics was anal
Publikováno v:
MRS Proceedings. 403
We have found, for excimer laser crystallized poly-Si thin films, that there are two different grain growth processes that depend on the energy density. Columnar grains grow laterally at lower energy densities. The other grain growth process at highe