Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Fujimoto, Kensuke"'
Autor:
Shinto, Hiroyuki, Ryu, Toshiki, Fukuda, Junko, Fujimoto, Kensuke, Hirohashi, Yumiko, Seto, Hirokazu
Publikováno v:
In Advanced Powder Technology October 2023 34(10)
Publikováno v:
日本金属学会誌. 73(5):373-380
In the field of electronics, it is crucial to guarantee long-term joint reliability of the Sn-Ag-Cu solder alloy. Creep tests in low-stresses are necessary to guarantee the reliability. However, a very long period of time is required for the creep te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::6426799b92dbf7fe5a0306b5d8dfdce5
http://hdl.handle.net/2115/75539
http://hdl.handle.net/2115/75539
Autor:
Ii, Seiichiro, Hirota, Takeshi, Fujimoto, Kensuke, Sugimoto, Youhei, Takata, Naoki, Ikeda, Ken-ichi, Nakashima, Hideharu, Nakashima, Hiroshi
Publikováno v:
MATERIALS TRANSACTIONS. 49(4):723-727
The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) process was investigated by scanning transmission electron microscopy (STEM) and in-situ heating transmission electron microscopy (TEM) obs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::0a86ad6123f79b27b24b90e564d97ec3
http://hdl.handle.net/2115/75557
http://hdl.handle.net/2115/75557
Autor:
Ikeda, Ken-ichi, Hirota, Takeshi, Fujimoto, Kensuke, Sugimoto, Youhei, Takata, Naoki, Ii, Seiichiro, Nakashima, Hideharu, Nakashima, Hiroshi
Publikováno v:
日本金属学会誌. 71(2):158-163
The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) was investigated by in-situ heating transmission electron microscopy (TEM). The electron dispersive X-ray spectroscopy (EDS) analysis of an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::957f488e9a44a139e0ac1141f3a6e4eb
http://hdl.handle.net/2115/75542
http://hdl.handle.net/2115/75542
Autor:
Ikeda, Ken-ichi, Nakashima, Hideharu, Hirota, Takeshi, Fujimoto, Kensuke, Sugimoto, Youhei, Takata, Naoki, Ii, Seiichiro, Nakashima, Hiroshi
Publikováno v:
まてりあ. 45(12):906-906
多結晶シリコン(Si)薄膜を低温で作製するプロセスの一つとしてアルミニウムAAl)誘起結晶化(Aluminum Induced Crystallization: AIC)法が注目されている。AIC法では、Fig.1に示すように基板にAl膜→ア
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::3993fecffff5b087504e134b19affc12
http://hdl.handle.net/2115/75576
http://hdl.handle.net/2115/75576