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Enhanced Columnar Stucture in CsI Layer by Substrate Patterning

Autor: Jing, T., Cho, G., Drewery, J., Fujieda, I., Kaplan, S.N., Mireshghi, A., Perez-Mendez, V., Wildermuth, D.

Publikováno v: Jing, T.; Cho, G.; Drewery, J.; Fujieda, I.; Kaplan, S.N.; Mireshghi, A.; et al.(1991). Enhanced Columnar Stucture in CsI Layer by Substrate Patterning. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/16p0c8nb

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______325::d7c6d05182ca45d913fb8b15ff1f0f73
http://www.escholarship.org/uc/item/16p0c8nb

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X-Ray and Charged Particle Detection with CsI(Tl) Layer Coupled to a-Si:H Photodiode Layers

Autor: Gee, T., Jing, T., Cho, G., Kaplan, S. N., Fujieda, I., Cho G., Drewery J., Gee T., Jing T., Kaplan S. N., Perez-Mendez V., Wildermuth D. (Lawrence Berkeley L.-A.-B. CA (USA)), Street R. A. (Xerox Palo Alto Research Center CA, Drewery, J., Perez-Mendez, V., Wildermuth, D., Street, R. A.

Publikováno v: Fujieda, I.; Cho, G.; Drewery, J.; Gee, T.; Jing, T.; Kaplan, S.N.; et al.(1990). X-Ray and Charged Particle Detection with CsI(Tl) Layer Coupled to a-Si:H Photodiode Layers. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/39g401kp

A compact real-time X-ray and charged particle imager with digitized position output can built either by coupling a fast scintillator to a photodiode array or by forming one on a photodiode array directly. CsI(Tl) layers 100--1000{mu}m thick were eva

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::20c24c94043729621967df128a7dfa23
http://www.escholarship.org/uc/item/39g401kp

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A Study of Signal Generation and Charge Collection in a-Si:H Diodes for Radiation Imaging

Autor: Fujieda, I.

Publikováno v: Fujieda, I.(1990). A Study of Signal Generation and Charge Collection in a-Si:H Diodes for Radiation Imaging. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/02s7f42x

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______325::a17e96f118356bbac944a498219f0430
http://www.escholarship.org/uc/item/02s7f42x

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Measurements of 1/f Noise in A-Si: H Pin Diodes and Thin-Film-Transistors

Autor: Cho, G., Drewery, J.S., Fujieda, I., Jing, T., Kaplan, S.N., Perez-Mendez, V., Qureshi, S., Wildermuth, D., Street, R.A.

Publikováno v: Cho, G.; Drewery, J.S.; Fujieda, I.; Jing, T.; Kaplan, S.N.; Perez-Mendez, V.; et al.(1990). Measurements of 1/f Noise in A-Si: H Pin Diodes and Thin-Film-Transistors. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/0cs6n2b7

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______325::9741c7e132fc930801aee8896f00fec5
http://www.escholarship.org/uc/item/0cs6n2b7

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Properties and Applications of Amorphous Silicon in Charged Particle, Gamma Ray and Light Detection

Autor: Perez-Mendez, V., Cho, G., Drewery, J., Fujieda, I., Kaplan, S.N., Qureshi, S., Street, R.A.

Publikováno v: Perez-Mendez, V.; Cho, G.; Drewery, J.; Fujieda, I.; Kaplan, S.N.; Qureshi, S.; et al.(1990). Properties and Applications of Amorphous Silicon in Charged Particle, Gamma Ray and Light Detection. Physics and Applications of Amorphous and Microcrystalline Semiconductor Devices. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/4cd8161g

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______325::bb0a0897662c453b8f1571f26002e66a
http://www.escholarship.org/uc/item/4cd8161g

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