Zobrazeno 1 - 10
of 135
pro vyhledávání: '"Fuhrer, Andreas"'
Autor:
Kelly, Eoin G., Orekhov, Alexei, Hendrickx, Nico, Mergenthaler, Matthias, Schupp, Felix, Paredes, Stephan, Eggli, Rafael S., Kuhlmann, Andreas V., Harvey-Collard, Patrick, Fuhrer, Andreas, Salis, Gian
In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the expense o
Externí odkaz:
http://arxiv.org/abs/2309.10473
Publikováno v:
Solid-State Electronics 200 (2023) 108550
We present a TCAD-based simulation framework established for quantum dot spin qubits in a silicon FinFET platform with all-electrical control of the spin state. The framework works down to 1K and consists of a two-step simulation chain, from definiti
Externí odkaz:
http://arxiv.org/abs/2306.03213
Autor:
Bosco, Stefano, Geyer, Simon, Camenzind, Leon C., Eggli, Rafael S., Fuhrer, Andreas, Warburton, Richard J., Zumbühl, Dominik M., Egues, J. Carlos, Kuhlmann, Andreas V., Loss, Daniel
The spin-orbit interaction in spin qubits enables spin-flip transitions, resulting in Rabi oscillations when an external microwave field is resonant with the qubit frequency. Here, we introduce an alternative driving mechanism of hole spin qubits, wh
Externí odkaz:
http://arxiv.org/abs/2303.03350
Autor:
Geyer, Simon, Hetényi, Bence, Bosco, Stefano, Camenzind, Leon C., Eggli, Rafael S., Fuhrer, Andreas, Loss, Daniel, Warburton, Richard J., Zumbühl, Dominik M., Kuhlmann, Andreas V.
Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. Hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and nuclear spin
Externí odkaz:
http://arxiv.org/abs/2212.02308
Autor:
Camenzind, Leon C., Geyer, Simon, Fuhrer, Andreas, Warburton, Richard J., Zumbühl, Dominik M., Kuhlmann, Andreas V.
The greatest challenge in quantum computing is achieving scalability. Classical computing previously faced a scalability issue, solved with silicon chips hosting billions of fin field-effect transistors (FinFETs). These FinFET devices are small enoug
Externí odkaz:
http://arxiv.org/abs/2103.07369
Autor:
Geyer, Simon, Camenzind, Leon C., Czornomaz, Lukas, Deshpande, Veeresh, Fuhrer, Andreas, Warburton, Richard J., Zumbühl, Dominik M., Kuhlmann, Andreas V.
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we investigate
Externí odkaz:
http://arxiv.org/abs/2007.15400
Publikováno v:
Nature Electronics (2020)
Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $\delta$-layers, fabricated by gas-phase doping, are c
Externí odkaz:
http://arxiv.org/abs/1912.06188
Autor:
Skeren, Tomas, Pascher, Nikola, Garnier, Arnaud, Reynaud, Patrick, Rolland, Emmanuel, Thuaire, Aurelie, Widmer, Daniel, Jehl, Xavier, Fuhrer, Andreas
Publikováno v:
Nanotechnology, 29, 435302 (2018)
Controlled atomic scale fabrication of functional devices is one of the holy grails of nanotechnology. The most promising class of techniques that enable deterministic nanodevice fabrication are based on scanning probe patterning or surface assembly.
Externí odkaz:
http://arxiv.org/abs/1910.00718
Akademický článek
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Autor:
Ganzhorn, Marc, Egger, Daniel J., Barkoutsos, Panagiotis Kl., Ollitrault, Pauline, Salis, Gian, Moll, Nikolaj, Fuhrer, Andreas, Mueller, Peter, Woerner, Stefan, Tavernelli, Ivano, Filipp, Stefan
Publikováno v:
Phys. Rev. Applied 11, 044092 (2019)
A key requirement to perform simulations of large quantum systems on near-term quantum hardware is the design of quantum algorithms with short circuit depth that finish within the available coherence time. A way to stay within the limits of coherence
Externí odkaz:
http://arxiv.org/abs/1809.05057