Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Fuh Cheng Jong"'
Publikováno v:
Sensors, Vol 14, Iss 8, Pp 14553-14566 (2014)
Metal-aluminum oxide–hafnium aluminum oxide‒silicon oxide–silicon (hereafter MAHAOS) devices can be candidates for ionizing radiation sensor applications. In this work, MAHAOS devices (SONOS-like structures with high k stack gate dielectric) we
Externí odkaz:
https://doaj.org/article/7f8547c401304fff933ef0395153b1ca
Publikováno v:
Materials Science Forum. 977:250-255
The silicon-aluminum oxide-nitride-silicon oxide-silicon (hereafter SANOS) could be candidates for ultra violet total dose (hereafter UV TD) nonvolatile sensors. In the case of SANOS UV TD radiation sensors, the UV radiation induces a significant inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::893f80f97e4c3f6d7b5d9fc9794fd056
https://doi.org/10.4028/www.scientific.net/msf.977.250
https://doi.org/10.4028/www.scientific.net/msf.977.250
Publikováno v:
Sensors, Vol 16, Iss 4, p 450 (2016)
Fluorine-treated titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon devices (hereafter F-MOHOS) are candidates for total ionization dose (TID) radiation sensor applications. The main subject of the study reportedherein is the
Externí odkaz:
https://doaj.org/article/5381dd00fb404cce81198d282a353310
Publikováno v:
2020 IEEE 2nd International Conference on Architecture, Construction, Environment and Hydraulics (ICACEH).
A device with the layers of titanium nitride–indium tin oxide–silicon oxide–hafnium oxide–silicon oxide–silicon with a double gate of titanium nitride/indium-tin-oxide TiN/ITO (TIOHOS with TiN/ITO double gate) was applied to the total dose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72bf3f959bcce8a84fcc15e7412d6a3f
https://doi.org/10.1109/icaceh51803.2020.9366255
https://doi.org/10.1109/icaceh51803.2020.9366255
Publikováno v:
Sensors and Materials. 32:2303
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fea4606beab8417ae66a93b7b35244e7
https://doi.org/10.18494/sam.2020.2880
https://doi.org/10.18494/sam.2020.2880
Autor:
Chien-Min, Cheng, Kai-Huang, Chen, Da-Huei, Lee, Fuh-Cheng, Jong, Mei-Li, Chen, Jhih-Kai, Chang
Publikováno v:
Materials
By the conventional solid state reaction method, a small amount of lithium fluoride (LiF) was used as the sintering promoter to improve the sintering and piezoelectric characteristics of (Ba0.95Ca0.05)(Ti0.93Sn0.07)O3 (BCTS) lead-free piezoceramic sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::767752c92f5610762f84410fe4327578
https://pubmed.ncbi.nlm.nih.gov/29364832
https://pubmed.ncbi.nlm.nih.gov/29364832
Autor:
Fuh-Cheng Jong, Wen-Ching Hsieh
Publikováno v:
Sensors and Materials. 31:1727
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc7ddf18f0ad9c9367b7b517d37d40be
https://doi.org/10.18494/sam.2019.2332
https://doi.org/10.18494/sam.2019.2332
Publikováno v:
Sensors & Materials; 2020, Vol. 32 Issue 7, Part 1, p2303-2310, 8p
Autor:
Wen-Ching Hsieh, Fuh-Cheng Jong
Publikováno v:
Proceedings of the 3rd International Electronic Conference on Sensors and Applications, 15–30 November 2016; Available online: https://sciforum.net/conference/ecsa-3..
The titanium nitride–aluminum oxide–hafnium oxide–silicon oxide–silicon device using aluminum oxide as charge-blocking layer (hereafter TAHOS) could be a candidate for nonvolatile total ionization dose (TID) radiation sensor. In this paper, g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e84ae9942e359faa2fd33c7cc9fbace3
https://doi.org/10.3390/ecsa-3-c001
https://doi.org/10.3390/ecsa-3-c001
Publikováno v:
Sensors (Basel, Switzerland)
Sensors; Volume 16; Issue 4; Pages: 450
Sensors, Vol 16, Iss 4, p 450 (2016)
Sensors; Volume 16; Issue 4; Pages: 450
Sensors, Vol 16, Iss 4, p 450 (2016)
Fluorine-treated titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon devices (hereafter F-MOHOS) are candidates for total ionization dose (TID) radiation sensor applications. The main subject of the study reportedherein is the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3691484bb06400db2d92f32c09b6688
http://europepmc.org/articles/PMC4850964
http://europepmc.org/articles/PMC4850964