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pro vyhledávání: '"Fuchs, Gordian"'
Autor:
Cakar, Efe, Ercan, H. Ekmel, Fuchs, Gordian, Denisov, Artem O., Anderson, Christopher R., Gyure, Mark F., Petta, Jason R.
Publikováno v:
Appl. Phys. Lett. 125, 143504 (2024)
A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate microscopy has b
Externí odkaz:
http://arxiv.org/abs/2405.03596
Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor
Publikováno v:
Appl. Phys. Lett. 123, 093502 (2023)
We demonstrate dispersive charge sensing of Si/SiGe single and double quantum dots (DQD) by coupling sub-micron floating gates to a radio frequency reflectometry (rf-reflectometry) circuit using the tip of an atomic force microscope (AFM). Charge sta
Externí odkaz:
http://arxiv.org/abs/2305.05571
Publikováno v:
PRX Quantum 4, 030309 (2023)
We use the tip of an atomic force microscope (AFM) to charge floating metallic gates defined on the surface of a Si/SiGe heterostructure. The AFM tip serves as an ideal and movable cryogenic switch, allowing us to bias a floating gate to a specific v
Externí odkaz:
http://arxiv.org/abs/2302.07949
Autor:
Denisov, Artem O., Oh, Seong W., Fuchs, Gordian, Mills, Adam R., Chen, Pengcheng, Anderson, Christopher R., Gyure, Mark F., Barnard, Arthur W., Petta, Jason R.
Publikováno v:
Nano Letters 22, 4807 (2022)
Conventional quantum transport methods can provide quantitative information on spin, orbital, and valley states in quantum dots, but often lack spatial resolution. Scanning tunneling microscopy, on the other hand, provides exquisite spatial resolutio
Externí odkaz:
http://arxiv.org/abs/2203.05912
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