Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Fuchen Mu"'
Publikováno v:
Microelectronics Reliability. 42:985-989
Subthreshold gate voltage shift ΔVgw of n-MOSFET's with different oxide thicknesses aging at various stress conditions was statisticalized using Weibull distribution. Based on the statistical results, an empirical expression for the relationship bet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f28ba9e8687e32dd330c5ab7d4af1d2
https://doi.org/10.1016/s0026-2714(02)00007-0
https://doi.org/10.1016/s0026-2714(02)00007-0
Publikováno v:
Microelectronics Reliability. 41:1909-1913
Hot-carrier degradation of n-MOSFETs at high gate voltages ( V g = V d ) is examined. A new lifetime prediction method is developed based on the universal power law between the degradation of saturated drain current (d I dsat ) and the product of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a22943d9814a9e103cbbd89d0ce8fc2
https://doi.org/10.1016/s0026-2714(01)00118-4
https://doi.org/10.1016/s0026-2714(01)00118-4
Publikováno v:
Solid-State Electronics. 45:1081-1084
The effects of interface roughness on the amplitudes of Fowler–Nordheim (FN) tunneling current oscillations in ultrathin metal-oxide-semiconductor field transistors are investigated by numerical analysis. The interface roughness is described in ter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55624ff670a4a29286ee885d323dca4b
https://doi.org/10.1016/s0038-1101(01)00144-7
https://doi.org/10.1016/s0038-1101(01)00144-7
Publikováno v:
Solid-State Electronics. 45:385-389
Hot-carrier degradation of n-channel MOSFETs with 4 and 9 nm gate oxides is studied under intermediate gate voltage stress ( V g = V d /2). An alternating injection method is proposed for determining the electron trapping effect on saturated drain cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af50f55feb0b83fc6d459799fad96d9f
https://doi.org/10.1016/s0038-1101(01)00072-7
https://doi.org/10.1016/s0038-1101(01)00072-7
Publikováno v:
Solid-State Electronics. 45:435-439
Hot-carrier effects of n-channel MOSFETs are investigated under a series of stress modes. A novel method for determining the effect of interface trap generation on device degradation is proposed based on alternating injection technique. Results show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4121b627491861b26b53e6c527788af4
https://doi.org/10.1016/s0038-1101(01)00047-8
https://doi.org/10.1016/s0038-1101(01)00047-8
Publikováno v:
IEEE Transactions on Electron Devices. 48:2740-2745
Peaks appear after proportional differentiation of cumulative distribution functions of Weibull and lognormal distributions. The characteristic parameters can be extracted from the proportional difference peaks because these peaks are related to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5972c9b5f02def7023390949a1ffc74f
https://doi.org/10.1109/16.974698
https://doi.org/10.1109/16.974698
Publikováno v:
Solid-State Electronics. 44:1419-1424
Based on proportional difference theory, proportional difference characteristics of the cumulative distribution function of Weibull distribution were analyzed using proportion difference operator. On this basis, a new method – proportional differen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b28e18860ecd53a5cb7e2a34915fa76
https://doi.org/10.1016/s0038-1101(00)00076-9
https://doi.org/10.1016/s0038-1101(00)00076-9
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper outlines the analysis of a flash single bit failure caused by bitcell degradation over write/erase cycling. With no physical anomaly present at the failing single bit, Atomic Force Probing (AFP) characterization was utilized in conjunction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a0243fb0c115c1aa17696e24bd9227d
https://doi.org/10.31399/asm.cp.istfa2011p0207
https://doi.org/10.31399/asm.cp.istfa2011p0207
Publikováno v:
Microelectronics Reliability. 41:129-131
By proportional differentiating cumulative distribution functions of normal and log–normal distributions, spectroscopy characteristics were found. The characteristic parameters can be extracted from the spectroscopy peaks because these peaks are re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2074bcee908ddab7479545281aea4c0
https://doi.org/10.1016/s0026-2714(00)00029-9
https://doi.org/10.1016/s0026-2714(00)00029-9
Publikováno v:
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).
Comparing the characteristics of gate voltage shift (delta V/sub gw/) to time-dependent dielectric breakdown (i.e., TDDB), it is shown that both gate voltage shift (delta V/sub gw/) and TDDB are of a single mode in Weibull distribution, field acceler
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fa664f068e35c68cdc4b5fb65eaf9ac
https://doi.org/10.1109/icsict.2001.982067
https://doi.org/10.1109/icsict.2001.982067