Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Fu-yen Jian"'
Autor:
Fu-yen Jian, 簡富彥
98
Recently, active matrix flat-panel displays are widely used in consumer electronic products. With increasing popularity of flat-panel displays, market competition becomes more intense and demands for high performance flat-panel displays are i
Recently, active matrix flat-panel displays are widely used in consumer electronic products. With increasing popularity of flat-panel displays, market competition becomes more intense and demands for high performance flat-panel displays are i
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/86442239769886062968
Autor:
Fu-Yen Jian, 簡富彥
87
Previous studies have shown that both normal and anomalous chaotic diffusion can be totally suppressed by the presence of quenched disorder in the equation of motion [G. Radons, Phys. Rev. Lett. 77, 4748 (1996)]. In this work, we extend the p
Previous studies have shown that both normal and anomalous chaotic diffusion can be totally suppressed by the presence of quenched disorder in the equation of motion [G. Radons, Phys. Rev. Lett. 77, 4748 (1996)]. In this work, we extend the p
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/22133201695436100788
Autor:
Ya-Hsiang Tai, Kuan-Chang Chang, Yong-En Syu, Geng-Wei Chang, Fu-Yen Jian, Ya-Chi Hung, Tsung-Ming Tsai, Jhe-Ciou Jhu, Ting-Chang Chang
Publikováno v:
IEEE Transactions on Electron Devices. 61:2119-2124
The instability of the gate bias and drain bias stresses is observed at high temperature in amorphous InGaZnO thin-film transistors (a-IGZO TFTs). The transfer characteristics of a-IGZO TFTs at different temperatures are also investigated in this pap
Autor:
Te-Chih Chen, Ting-Chang Chang, Yu Chun Chen, Fu-Yen Jian, Sheng-Yao Huang, Hui-Chun Huang, Dershin Gan, Min-Chen Chen
Publikováno v:
Surface and Coatings Technology. 231:117-121
This work presents the light–color-dependent negative bias stress (NBIS) effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with Al2O3 passivation layer. The colors of incident photon are varied from red to blue, th
Autor:
Chia-Sheng Lin, Yu-Te Chen, Jing-Yi Yan, Tien-Yu Hsieh, Wu-Wei Tsai, Ming-Yen Tsai, Ting-Chang Chang, Te-Chih Chen, Fu-Yen Jian, Wen-Jen Chiang
Publikováno v:
Surface and Coatings Technology. 231:478-481
This paper investigates the temperature and ambiance effects on various reliability issues for InGaZnO thin film transistors with an organic passivation layer. Hot-carrier stress and gate-bias stress are carried out under different environmental temp
Autor:
Ya-Hsiang Tai, Kuan-Chang Chang, Jhe Ciou Jhu, Fu Yen Jian, Geng Wei Chang, Tsung-Ming Tsai, Ya Chi Hung, Yong En Syu, Ting-Chang Chang
Publikováno v:
Surface and Coatings Technology. 231:281-284
N 2 O plasma treatment suppressed the temperature-dependent sub-threshold leakage current of amorphous indium–gallium–zinc-oxide thin film transistors (a-IGZO TFTs). For untreated devices, the transfer curve exhibited abnormal electrical properti
Autor:
Te-Chih Chen, Chih-Tsung Tsai, Ting-Chang Chang, Shih-Ching Chen, Chia-Sheng Lin, Tien-Yu Hsieh, Ming-Yen Tsai, Fu-Yen Jian
Publikováno v:
Surface and Coatings Technology. 231:465-470
Mechanism of the light-induced instability for InGaZnO thin film transistors has been investigated in this paper. The obvious ambient dependence under light illumination in vacuum and oxygen illustrates that the gas adsorption/desorption dominate the
Autor:
Jhe-Ciou Jhu, Ting-Chang Chang, Geng-Wei Chang, Tsung-Ming Tsai, Yong-En Syu, Fu-Yen Jian, Kuan-Chang Chang, Ya-Hsiang Tai
Publikováno v:
ECS Transactions. 45:47-55
The abnormal sub-threshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). To confirm this phenomenon dependence of the defects of a-IGZO active layer, the paper proposes the
Autor:
Ying-Lang Wang, Ann-Kuo Chu, Simon M. Sze, Ting-Chang Chang, Kai-Hung Cheng, Jheng-Jie Huang, Ming-Jinn Tsai, Yu-Ting Chen, Hsueh-Chih Tseng, Fu-Yen Jian
Publikováno v:
Thin Solid Films. 529:389-393
This paper studies the effect of doping on BON-based resistive switching characteristics. Typical bipolar resistive switching behavior can be observed in Pt/BON/TiN and Pt/BON:Gd/TiN devices. The conductive path(s) of the Pt/BON/TiN is vacancy-domina
Autor:
Kuan-Chang Chang, Geng Wei Chang, Ting-Chang Chang, Fu Yen Jian, Yong En Syu, Jhe Ciou Jhu, Ya-Hsiang Tai, Tsung-Ming Tsai
Publikováno v:
ECS Transactions. 45:169-178
The abnormal subthreshold leakage current is observed at high temperature in amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors (a-IGZO TFTs). To confirm this phenomenon dependence of the defects of a-IGZO active layer, the paper proposes the