Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Fu-Yi Tsai"'
Autor:
Fu-Yi Tsai, 蔡馥伊
102
The purpose of this study is to analyze the using of clustered classrooms in an open-space school, and analyze its team activities in teaching and learning. The research method includesliterature analysis, interviews and observation.The stud
The purpose of this study is to analyze the using of clustered classrooms in an open-space school, and analyze its team activities in teaching and learning. The research method includesliterature analysis, interviews and observation.The stud
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/89211916577182567594
Autor:
Fu-Yi Tsai, 蔡富義
89
In this dissertation, a simple in situ method is used to fabricate high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates. The formation of quantum dots was not due to strain relaxation, but due to the growth characteristics on (111)
In this dissertation, a simple in situ method is used to fabricate high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates. The formation of quantum dots was not due to strain relaxation, but due to the growth characteristics on (111)
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/01027384667376956015
Publikováno v:
2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.
The ESD robustness of gate-driven ESD clamp circuit in a 16-V CMOS process was investigated by the stresses of transmission line pulse (TLP), human-body-model ESD test, and machine-model (MM) ESD test. After TLP stresses of different voltage steps, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6f9b0b857a7c0d836a14805654ca4b2
https://doi.org/10.1109/ipfa.2012.6306283
https://doi.org/10.1109/ipfa.2012.6306283
Publikováno v:
Journal of the mechanical behavior of biomedical materials. 4(4)
In this study, the mechanical properties of bioactive coatings on Ti6Al4V substrates were investigated using instrumented nanoindentation. The aim was to observe the differences in the mechanical properties before and after immersion in collagen solu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26f2b167a1b33357ba84947519f99f92
https://pubmed.ncbi.nlm.nih.gov/21396611
https://pubmed.ncbi.nlm.nih.gov/21396611
Publikováno v:
ISCAS
A new low-leakage power-rail electrostatic discharge (ESD) clamp circuit designed with the consideration of gate-leakage issue is proposed and verified in a 65-nm low-voltage CMOS process. The new proposed design has a very small leakage current of o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::533c44b4da9c1d94f2e69b4f8a8ef7f0
https://doi.org/10.1109/iscas.2009.5118254
https://doi.org/10.1109/iscas.2009.5118254
Publikováno v:
2009 IEEE International Reliability Physics Symposium.
A new power-rail ESD clamp circuit with ultra-low-leakage design is presented and verified in a 65-nm CMOS process with a leakage current of only 116nA at 25°C, which is much smaller than that (613μA) of traditional design. Moreover, it can achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a90a9b6fcd54d8af8e855a9cf7bec1c
https://doi.org/10.1109/irps.2009.5173343
https://doi.org/10.1109/irps.2009.5173343
Publikováno v:
2008 IEEE International Reliability Physics Symposium.
An electrical overstress failure induced by a latch-up test is studied in high-voltage integrated cricuits. The latchup test resulted in damage to the output NMOSFET due to snapbach and also resulted in a latch-up in the internal circuits. These mech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2558d9bb7e6831d6b2150cb9c556c667
https://doi.org/10.1109/relphy.2008.4558958
https://doi.org/10.1109/relphy.2008.4558958
Autor:
Chen-Ti Hu, Fu-Yi Tsai
Publikováno v:
ECS Meeting Abstracts. :1426-1426
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a7b330278b3c537ef9c93287f88fde0
https://doi.org/10.1149/ma2011-01/23/1426
https://doi.org/10.1149/ma2011-01/23/1426
Publikováno v:
2009 IEEE International Symposium on Circuits & Systems; 2009, p2281-2284, 4p
Publikováno v:
2009 IEEE International Reliability Physics Symposium; 2009, p750-753, 4p