Zobrazeno 1 - 10 of 231 pro vyhledávání: '"Fu-Ming Pan"'
1
Akademický článek
Characteristics of Gate-All-Around Junctionless Polysilicon Nanowire Transistors With Twin 20-nm Gates
Autor: Tung-Yu Liu, Fu-Ming Pan, Jeng-Tzong Sheu
Publikováno v: IEEE Journal of the Electron Devices Society, Vol 3, Iss 5, Pp 405-409 (2015)
A high performance gate-all-around (GAA) junctionless (JL) polycrystalline silicon nanowire (poly-Si NW) transistor with channel width of 12 nm, channel thickness of 45 nm, and gate length of 20 nm has been successfully demonstrated, based on a simpl
Externí odkaz: https://doaj.org/article/82cbcf2b246d402389cabae255c71836
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3
Photoconductive properties of polycrystalline selenium based lateral MISIM photodetectors of high quantum efficiency using different dielectrics as the charge blocking layer
Autor: Yi Jie Lin, Yu Wei Huang, Jian Siang Lin, Chieh Yang Chen, Fu-Ming Pan, Cheng Yi Chang, Yiming Li, Jeng-Tzong Sheu, Jye Yow Liao
Publikováno v: Journal of Materials Science: Materials in Electronics. 30:12956-12965
We studied the photoconductive performance of polycrystalline selenium (pc-Se) based photodetectors with a lateral metal–insulator-semiconductor-insulator–metal (MISIM) device structure. The insulator layer is a 10 nm-thick Ga2O3, HfO2, or Al2O3
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::99b12a5f5a2b01e775e27ac584437d10
https://doi.org/10.1007/s10854-019-01658-6
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4
Correlation of surface processes with characteristic sensing responses of PdO thin films to ethanol
Autor: Cheng Yu Tsai, Fu-Ming Pan, Yi Sheng Chen, Jeng Han Wang, I. Kai Cheng
Publikováno v: Applied Surface Science. 473:589-596
Gas sensing characteristics of PdO nanoflake thin films exposed to ethanol (EtOH) at temperatures below 250 °C was studied. The PdO thin film responses distinctly to 0.15 ppm EtOH in dry air at temperatures above 100 °C. A characteristic valley-sha
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b13f86fbd80e01d503c49d4497596a12
https://doi.org/10.1016/j.apsusc.2018.12.195
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5
Source/Drain Activation for Flexible Poly-Si Nanoscale pFETs with a Laser-Buffer Layer by CO2 laser Annealing
Autor: Po-Cheng Hou, Wen-Hsien Huang, Ming-Hsuan Kao, Hsing-Hsiang Wang, Jia-Min Shieh, Chang-Hong Shen, Fu-Ming Pan, Li Chang
Publikováno v: ECS Journal of Solid State Science and Technology. 11:065007
A laser-buffer layer of SiO2/W/SiO2 with a high reflectivity at 10.6 μm enables CO2 laser treatment for the source/drain dopant activation of poly-Si nanoscale field-effect transistor (nano-FET) (Wch/Lg = 70/70 nm) on the flexible polyimide substrat
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fdc556680dcba2163b5f670b8c9a6e7c
https://doi.org/10.1149/2162-8777/ac760c
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6
Akademický článek
Source/Drain Activation for Flexible Poly-Si Nanoscale pFETs with a Laser-Buffer Layer by CO2 laser Annealing.
Autor: Po-Cheng Hou, Wen-Hsien Huang, Ming-Hsuan Kao, Hsing-Hsiang Wang, Jia-Min Shieh, Chang-Hong Shen, Fu-Ming Pan, Li Chang
Publikováno v: ECS Journal of Solid State Science & Technology; Jun2022, Vol. 11 Issue 6, p330-335, 6p
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7
Effect of hole blocking dielectric layer on microstructure and photoconducting properties of polycrystalline Se thin films
Autor: Jian Siang Lin, Jye Yow Liao, Yi Jie Lin, Fu-Ming Pan, Cheng Yi Chang, Yu Wei Huang
Publikováno v: Journal of Materials Science: Materials in Electronics. 29:15203-15211
We fabricated polycrystalline selenium (c-Se) based photodetectors using three different dielectrics (HfO2, Al2O3 and SiO2) as the hole blocking layer (HBL), and studied the influence of the HBLs on the photoconducting performance of the photodetecto
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8b282482e98734e84e1735f6cfddd807
https://doi.org/10.1007/s10854-018-9662-3
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9
Akademický článek
Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression.
Autor: Cheng-Yi Chang, Fu-Ming Pan, Jian-Siang Lin, Tung-Yuan Yu, Yi-Ming Li, Chieh-Yang Chen
Publikováno v: Journal of Applied Physics; 2016, Vol. 120 Issue 23, p234501-1-234501-8, 8p, 4 Diagrams, 1 Chart, 5 Graphs
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10
Selective Deposition of Multiple Sensing Materials on Si Nanobelt Devices through Plasma-Enhanced Chemical Vapor Deposition and Device-Localized Joule Heating
Autor: Jeng-Tzong Sheu, Kuang Yang Cheng, Fu-Ming Pan, Ru Zheng Lin
Publikováno v: ACS Applied Materials & Interfaces. 9:39935-39939
This paper describes a novel method, using device-localized Joule heating (JH) in a plasma enhanced atomic layer deposition (PEALD) system, for the selective deposition of platinum (Pt) and zinc oxide (ZnO) in the n– regions of n+/n–/n+ polysilic
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1654a36e89394faf5891886d7e2c8e30
https://doi.org/10.1021/acsami.7b13896
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