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pro vyhledávání: '"Fu-Hsiang Chuang"'
Autor:
Ya-Hsin Lee, Yi-Ting Shih, Fang-Hsin Lu, Pei-Wen Li, Fu-Hsiang Chuang, Bing-Yue Tsui, Jung-Chien Cheng, Liang-Yu Chen, Ya-Ru Jhuang, Yi-Ting Huang, Chia-Lung Hung
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
We report a high performance 4H-SiC CMOS process for sub-10 V operation featuring LOCal Oxidation of SiC isolation and balanced gate oxidation process. Temperature stability of SiC MOSFETs and CMOS inverters are characterized up to 300 °C. High volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42736c1a1359dd6dc3976acd17e56fd8
https://doi.org/10.1109/vlsi-tsa51926.2021.9440126
https://doi.org/10.1109/vlsi-tsa51926.2021.9440126
