Zobrazeno 1 - 10
of 107
pro vyhledávání: '"Fu-Chien Chiu"'
Publikováno v:
Photonics, Vol 9, Iss 5, p 350 (2022)
The optical power density in biotissue is an important issue for photobiomodulation (PBM) clinical applications. In our previous study, the maximal dose and the power density distributions of 830 nm lasers under human skin could be exactly calculated
Externí odkaz:
https://doaj.org/article/e4b54b61fd0b4e648b276a9488acddf1
Autor:
Fu-Chien Chiu, Wen-Ping Chiang
Publikováno v:
Materials, Vol 8, Iss 9, Pp 5795-5805 (2015)
This paper addresses the trap exploration in amorphous boron-doped ZnO (ZnO:B) films using an asymmetric structure of metal-oxide-metal. In this work, the structure of Ni/ZnO:B/TaN is adopted and the ZnO:B film is deposited by RF magnetron sputtering
Externí odkaz:
https://doaj.org/article/ecfd34aa35f94315bc93945bac670128
Autor:
Fu-Chien Chiu
Publikováno v:
Materials, Vol 7, Iss 11, Pp 7339-7348 (2014)
In this work, metal/oxide/metal capacitors were fabricated and investigated using transparent boron doped zinc oxide (ZnO:B) films for resistance switching memory applications. The optical band gap of ZnO:B films was determined to be about 3.26 eV an
Externí odkaz:
https://doaj.org/article/f8f5b32b83e647bab44d9ce6829b8feb
Publikováno v:
Crystals, Vol 9, Iss 9, p 450 (2019)
In the past, high-κ dielectrics gained much attention because of the constant demand for increasingly smaller semiconductors. At the same time, in the field of optical sensing, high-κ dielectrics are key materials. This study presents the experimen
Externí odkaz:
https://doaj.org/article/811c156273f3492bbfb32ef772492c19
Publikováno v:
Advances in Materials Science and Engineering, Vol 2015 (2015)
Butting/inserted pickup layout style could result in severe ESD degradation of NMOS devices beyond deep submicron technology. A split island layout style of butting/inserted substrate pickups is designed for a multifinger NMOS structure to enhance it
Externí odkaz:
https://doaj.org/article/eb54608905274dfbbb82501ecc5443e1
Autor:
Fu-Chien Chiu
Publikováno v:
Advances in Materials Science and Engineering, Vol 2014 (2014)
The conduction mechanisms in dielectric films are crucial to the successful applications of dielectric materials. There are two types of conduction mechanisms in dielectric films, that is, electrode-limited conduction mechanism and bulk-limited condu
Externí odkaz:
https://doaj.org/article/695ca4338d3d4a5fa93783dc8200d886
Publikováno v:
Advances in Materials Science and Engineering, Vol 2014 (2014)
Externí odkaz:
https://doaj.org/article/03b3ee6d27954fa79947068c8030a0f0
Autor:
Chih-Yao Huang, Fu-Chien Chiu
Publikováno v:
Advances in Materials Science and Engineering, Vol 2013 (2013)
A substrate-and-gate triggering scheme which utilizes dynamic threshold principle is proposed for an ESD NMOS structure. This scheme enhances the device reliability performance in terms of higher second breakdown current and both reduced holding volt
Externí odkaz:
https://doaj.org/article/e1224b1a0ff04d5cb36db7cf24c51c5e
Autor:
Fu-Chien Chiu
Publikováno v:
Advances in Materials Science and Engineering, Vol 2013 (2013)
Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory devices. A negative differential resistance or snapback characteristic can be observed when the memory device switches from a high resistance state to a low
Externí odkaz:
https://doaj.org/article/238cecb6daa44fc886ceeebc00ffa7dc
Autor:
Fu-Chien Chiu
Publikováno v:
Advances in Materials Science and Engineering, Vol 2013 (2013)
The interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombin
Externí odkaz:
https://doaj.org/article/3588359c8bc24ccf9edd5909d93d26c0