Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Fu-Chang Lo"'
Autor:
Fu-Chang Lo
Publikováno v:
An Introduction to Biological and Artificial Neural Networks for Pattern Recognition.
Mask technology, for 0.25gm lithography and beyond, presents a significant challenge to both the mask industry and silicon industry. It is expected that optical lithography will continue to be the predominant approach, and the exposure wavelength of
Autor:
Fu-Chang Lo, Wang, David H., Giang Dao, Farnsworth, Jeff, Rawlins, Wayne, LaVoy, Rosanne, DeWitt, Jim, Goyal, Rahul, Gang Liu, Daugherty, Susan
Publikováno v:
Proceedings of SPIE; 4/6/2017, Vol. 10320, p1032006-1-1032006-27, 27p, 5 Diagrams, 4 Charts, 11 Graphs
Autor:
Kangmin Hsia, Pei-yang Yan, Rajesh Nagpal, Ted Liang, Alan R. Stivers, Barry Lieberman, Fu-Chang Lo, Michael Penn, Edita Tejnil, Emily Y. Shu, Guojing Zhang
Publikováno v:
SPIE Proceedings.
The introduction of extreme ultraviolet (EUV) lithography into high volume manufacturing requires the development of a new mask technology. In support of this, Intel Corporation has established a pilot line devoted to encountering and eliminating bar
Autor:
Fu-Chang Lo, Corey Foster, Florence Eschbach, Alex Tregub, Ikuo Matsukura, Nana Tsushima, Kevin J. Orvek
Publikováno v:
SPIE Proceedings.
Fluoropolymers were/are successfully used for pellicle manufacturing in 248 and 193 nm lithography. However, all known fluoropolymers rapidly degrade when exposed to high-energy 157 nm irradiation. Lack of suitable polymer “soft” pellicle has bec
Autor:
Robert E. Gleason, David H. Hwang, Joseph E. Brandenburg, Richard E. Schenker, Vivek K. Singh, Yan Borodovsky, Gary Allen, Fu-Chang Lo, Edita Tejnil, Robert M. Bigwood
Publikováno v:
SPIE Proceedings.
Intel will start high volume manufacturing (HVM) of the 65nm node in 2005. Microprocessor density and performance trends will continue to follow Moore's law and cost-effective patterning solutions capable of supporting it have to be found, demonstrat
Autor:
Florence Eschbach, Fu-Chang Lo, Roxann L. Engelstad, Edward G. Lovell, Emily Y. Shu, Kaname Okada, Shinya Kikugawa, Eric P. Cotte
Publikováno v:
SPIE Proceedings.
Identifying a functional pellicle solution for 157-nm lithography remains the most critical issue for mask technology. Developing a hard pellicle system has been a recent focus of study. Fabrication and potential pellicle-induced image placement erro
Publikováno v:
SPIE Proceedings.
In this paper we present studies on the optical transmittance of modified fused silica substrates subject to mask making dry etch and wet clean processes, mask handling, and photon chemical clean. Using a custom built nitrogen purged in-situ transmit
Autor:
Munehiko Tsubosaki, Jun-Fei Zheng, Eric M. Panning, Giang T. Dao, Roswitha Remling, Fu-Chang Lo, Kevin J. Orvek, Ronald Kuse
Publikováno v:
SPIE Proceedings.
157-nm lithography has gained significant momentum and worldwide support as the post-193 nm technology. Due to higher absorption at shorter wavelength, however, there are several critical issues including materials and reticle handling at 157-nm. The
Autor:
Fu-Chang Lo, Mark Thiec-Hien Tran, Pei-yang Yan, Alan R. Stivers, Ted Liang, Jeffrey E. Powers, Guojing Zhang, Patrick Kofron
Publikováno v:
SPIE Proceedings.
In this paper, we will present our research work in EUVL mask absorber characterization and selection. The EUV mask patterning process development depends on the choice of EUVL mask absorber material, which has direct impact on the mask quality such
Autor:
Susan M. Holl, Fu-Chang Lo, Andrew Grenville, Raghu Balasubramanian, John M. Hutchinson, Jun-Fei Zheng, Eric M. Panning, Kevin J. Orvek, Don Bruner, Veena Rao, Joseph C. Langston, Giang T. Dao, Ling Liao, Ronald Kuse
Publikováno v:
SPIE Proceedings.
Intel is aggressively pursuing the use of 157 nm lithography for the 0.1 mm patterning node. Two areas of concentration have been in photoresist and reticle materials development. Over the six months, we have seen considerable progress in new materia