Zobrazeno 1 - 10
of 4 197
pro vyhledávání: '"Fu Kai"'
Autor:
Zhang Haiyan, Fu Kai
Publikováno v:
Zeitschrift für Kristallographie - New Crystal Structures, Vol 239, Iss 5, Pp 847-849 (2024)
C24H12BrF11N2O2, M = 648.26 g/mol, triclinic, P1̄ (no. 2), a = 8.9871(10) Å, b = 9.6519(10) Å, c = 13.8769(13) Å, α = 88.141(3)°, β = 83.049(3)°, γ = 87.821(4)°, V = 1193.5(2) Å3, Z = 2, Rgt(F) = 0.0604, wRref(F2) = 0.1624, T = 170 K.
Externí odkaz:
https://doaj.org/article/02793b9c27354e688701e91939a94166
Publikováno v:
Applied Sciences, Vol 14, Iss 13, p 5784 (2024)
Signals play a fundamental role in science, technology, and communication by conveying information through varying patterns, amplitudes, and frequencies. This paper introduces innovative methodologies for processing electromyographic (EMG) signals to
Externí odkaz:
https://doaj.org/article/39f29d94c8354921934022879b0c583e
Autor:
Rahaman, Imteaz, Li, Botong, Ellis, Hunter D., Van Devener, Brian Roy, Polson, Randy C, Fu, Kai
Ultrawide bandgap (UWBG) semiconductors are promising for next-generation power electronics, largely attributed to their substantial bandgap and exceptional breakdown electric field. Rutile GeO2 (r-GeO2) emerges as a promising alternative, particular
Externí odkaz:
http://arxiv.org/abs/2410.13199
Autor:
Fu, Kai
In this paper, we study trajectories on flat cone surfaces. We prove that on any area-one flat cone surface, the length of any trajectory $\gamma$ is bounded below by $b_1\sqrt{\iota(\gamma,\gamma)} - b_2$, where $\iota(\gamma,\gamma)$ is the self-in
Externí odkaz:
http://arxiv.org/abs/2409.14188
Publikováno v:
Zeitschrift für Kristallographie - New Crystal Structures, Vol 237, Iss 6, Pp 1193-1194 (2022)
C26H21N1S1O5, monoclinic, P21/c (no. 14), a = 7.623(3) Å, b = 25.617(12) Å, c = 11.775(5) Å, β = 100.073(8)°, V = 2264.2(17) Å3, Z = 4, R gt(F) = 0.0470, wR ref(F 2) = 0.1365, T = 298(2) K.
Externí odkaz:
https://doaj.org/article/ef62236aaedb482bbe19324be2eb81cd
The charge state of a quantum point defect in a solid state host strongly determines its optical and spin characteristics. Consequently, techniques for controlling the charge state are required to realize technologies such as quantum networking and s
Externí odkaz:
http://arxiv.org/abs/2408.16921
Autor:
Ching, Yu-Tai, Cho, Chin-Ping, Tang, Fu-Kai, Chang, Yi-Chiun, Cheng, Chang-Chieh, He, Guan-Wei, Chang, Ann-Shyn, Chuang, Chaochun
A method to reverse engineering of a fly brain using the {\it FlyCircuit} database is presented. This method was designed based on the assumption that similar neurons could serve identical functions. We thus cluster the neurons based on the similarit
Externí odkaz:
http://arxiv.org/abs/2407.04202
Rutile Germanium Dioxide (r-GeO$_2$) has been identified as an ultrawide bandgap (UWBG) semiconductor recently, featuring a bandgap of 4.68 eV, comparable to Ga$_2$O$_3$ but offering bipolar dopability, higher electron mobility, higher thermal conduc
Externí odkaz:
http://arxiv.org/abs/2407.02682
Publikováno v:
Zeitschrift für Kristallographie - New Crystal Structures, Vol 236, Iss 3, Pp 693-695 (2021)
C24H34N2OS, M = 398.59, orthorhombic, P212121 (no. 19), a = 11.0576(3) Å, b = 11.8406(3) Å, c = 18.0061(5) Å, V = 2357.51(11) Å3, Z = 4, Rgt(F) = 0.0334, wRref(F2) = 0.0780, T = 170 K.
Externí odkaz:
https://doaj.org/article/84ca3a5439264aa09fc37daf8f2ac54f
Publikováno v:
Nanophotonics, Vol 8, Iss 11, Pp 1867-1888 (2019)
Optically active point defects in wide-bandgap crystals are leading building blocks for quantum information technologies including quantum processors, repeaters, simulators, and sensors. Although defects and impurities are ubiquitous in all materials
Externí odkaz:
https://doaj.org/article/52a20b234c0d4a9d83e6118e032bb6d2