Zobrazeno 1 - 10
of 282
pro vyhledávání: '"Fu, Houqiang"'
Autor:
Wright, Dylan, Mudiyanselage, Dinusha Herath, Guzman, Erick, Fu, Xuke, Teeter, Jordan, Da, Bingcheng, Kargar, Fariborz, Fu, Houqiang, Balandin, Alexander A.
We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metalorganic chemical vapor deposition on sapphire substrates. The Brillouin - Mandelstam and Raman light scattering spectroscopies were used t
Externí odkaz:
http://arxiv.org/abs/2408.06951
This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic chemical vapor deposition (MOCVD) with an ultra-low ideality factor ({\eta}) of 1.65, a breakdown voltage (BV) of 640
Externí odkaz:
http://arxiv.org/abs/2406.15688
This letter reports the first demonstration of AlN Schottky diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition (MOCVD) with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics with ON/OF
Externí odkaz:
http://arxiv.org/abs/2311.05130
Autor:
Ghosh, Subhajit, Mudiyanselage, Dinusha Herath, Kargar, Fariborz, Zhao, Yuji, Fu, Houqiang, Balandin, Alexander A.
We report on the temperature dependence of the low-frequency electronic noise in NiO$_x$/Ga$_2$O$_3$ p-n heterojunction diodes. The noise spectral density is of the 1/f-type near room temperature but shows signatures of Lorentzian components at eleva
Externí odkaz:
http://arxiv.org/abs/2307.15659
Autor:
Ghosh, Subhajit, Mudiyanselage, Dinusha Herath, Rumyantsev, Sergey, Zhao, Yuji, Fu, Houqiang, Goodnick, Stephen, Nemanich, Robert, Balandin, Alexander A.
We report on the low-frequency electronic noise in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate cu
Externí odkaz:
http://arxiv.org/abs/2304.04744
Akademický článek
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Autor:
Zhou, Jingan, Chen, Hong, Fu, Houqiang, Fu, Kai, Deng, Xuguang, Huang, Xuanqi, Yang, Tsung-Han, Montes, Jossue A., Yang, Chen, Qi, Xin, Zhang, Baoshun, Zhang, Xiaodong, Zhao, Yuji
This paper reports the first demonstration of beta-phase gallium oxide as optical waveguides on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). The propagation losses from visible to ultraviolet spectra were comprehensiv
Externí odkaz:
http://arxiv.org/abs/1910.10880
Autor:
Chen, Hong, Zhou, Jingan, Li, Dongying, Chen, Dongyu, Vinod, Abhinav K., Fu, Houqiang, Huang, Xuanqi, Yang, Tsung-Han, Montes, Jossue A., Fu, Kai, Yang, Chen, Ning, Cun-Zheng, Wong, Chee Wei, Armani, Andrea M., Zhao, Yuji
On-chip ultraviolet to infrared (UV-IR) spectrum frequency metrology is of crucial importance as a characterization tool for fundamental studies on quantum physics, chemistry, and biology. Due to the strong material dispersion, traditional techniques
Externí odkaz:
http://arxiv.org/abs/1908.04719
Autor:
Hu, Yu, Zhang, Li, Chen, Tiwei, Ma, Yongjian, Tang, Wenbo, Huang, Zijing, Li, BoTong, Xu, Kun, Mudiyanselage, Dinusha Herath, Fu, Houqiang, Zhang, Xiaodong, Zeng, Zhongming, Zhang, Baoshun
Publikováno v:
In Vacuum July 2023 213
Autor:
Montes, Jossue, Yang, Chen, Fu, Houqiang, Yang, Tsung-Han, Huang, Xuanqi, Zhou, Jingan, Chen, Hong, Fu, Kai, Zhao, Yuji
Several pn junctions were constructed from mechanically exfoliated ultrawide bandgap (UWBG) beta-phase gallium oxide (\b{eta}-Ga2O3) and p-type gallium nitride (GaN). The mechanical exfoliation process, which is described in detail, is similar to tha
Externí odkaz:
http://arxiv.org/abs/1812.05729