Low interface trap density in scaled bilayer gate oxides on 2D materials via nanofog low temperature atomic layer deposition

Autor: Kwak, Iljo, Kavrik, Mahmut, Park, Jun Hong, Grissom, Larry, Fruhberger, Bernd, Wong, Keith T., Kang, Sean, Kummel, Andrew C.

Publikováno v: In Applied Surface Science 1 January 2019 463:758-766

Engineering High- k/SiGe Interface with ALD Oxide for Selective GeO x Reduction

Autor: Kavrik, Mahmut S, Ercius, Peter, Cheung, Joanna, Tang, Kechao, Wang, Qingxiao, Fruhberger, Bernd, Kim, Moon, Taur, Yuan, McIntyre, Paul C, Kummel, Andrew C

Publikováno v: ACS applied materials & interfaces, vol 11, iss 16
Kavrik, Mahmut S; Ercius, Peter; Cheung, Joanna; Tang, Kechao; Wang, Qingxiao; Fruhberger, Bernd; et al.(2019). Engineering High-k/SiGe Interface with ALD Oxide for Selective GeO x Reduction.. ACS applied materials & interfaces. doi: 10.1021/acsami.8b22362. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/9090d8h9

Suppression of electronic defects induced by GeO x at the high- k gate oxide/SiGe interface is critical for implementation of high-mobility SiGe channels in complementary metal-oxide-semiconductor (CMOS) technology. Theoretical and experimental studi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e4c18c9dde98620668fd5494cd393209
https://escholarship.org/uc/item/9090d8h9

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Engineering High‑k/SiGe Interface with ALD Oxide for Selective GeOx Reduction.

Autor: Kavrik, Mahmut S., Ercius, Peter, Cheung, Joanna, Tang, Kechao, Wang, Qingxiao, Fruhberger, Bernd, Kim, Moon, Taur, Yuan, McIntyre, Paul C., Kummel, Andrew C.

Publikováno v: ACS Applied Materials & Interfaces; 4/24/2019, Vol. 11 Issue 16, p15111-15121, 11p