Zobrazeno 1 - 10
of 160
pro vyhledávání: '"Fromm, F"'
Autor:
Olbrich, P., Kamann, J., König, M., Munzert, J., Tutsch, L., Eroms, J., Weiss, D., Liu, Ming-Hao, Golub, L. E., Ivchenko, E. L., Popov, V. V., Fateev, D. V., Mashinsky, K. V., Fromm, F., Seyller, Th., Ganichev, S. D.
Publikováno v:
Phys. Rev. B 93, 075422 (2016)
Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlatice deposited on top of monolayer graphene is formed
Externí odkaz:
http://arxiv.org/abs/1510.07946
Autor:
Fromm, F., Oliveira Jr, M. H., Molina-Sánchez, A., Hundhausen, M., Lopes, J. M. J., Riechert, H., Wirtz, L., Seyller, T.
Publikováno v:
New Journal of Physics 15 (2013) 043031
We report a Raman study of the so-called buffer layer with $(6\sqrt3\times6\sqrt3)R30^{\circ}$ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvan
Externí odkaz:
http://arxiv.org/abs/1212.1647
Autor:
Maassen, T., Berg, J. J. van den, Huisman, E. H., Dijkstra, H., Fromm, F., Seyller, T., van Wees, B. J.
Publikováno v:
Phys. Rev. Lett. 110, 067209 (2013)
We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin pr
Externí odkaz:
http://arxiv.org/abs/1208.3129
Autor:
Orlita, M., Crassee, I., Faugeras, C., Kuzmenko, A. B., Fromm, F., Ostler, M., Seyller, Th., Martinez, G., Polini, M., Potemski, M.
Publikováno v:
New Journal of Physics 14, 095008 (2012)
We report on absolute magneto-transmission experiments on highly-doped quasi-free-standing epitaxial graphene targeting the classical-to-quantum crossover of the cyclotron resonance. This study allows us to directly extract the carrier density and al
Externí odkaz:
http://arxiv.org/abs/1205.1118
Autor:
Maassen, T., Berg, J. J. van den, IJbema, N., Fromm, F., Seyller, T., Yakimova, R., van Wees, B. J.
Publikováno v:
Nano Letters 2012
We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau_S in monolayer grap
Externí odkaz:
http://arxiv.org/abs/1202.3016
Autor:
Speck, F., Jobst, J., Fromm, F., Ostler, M., Waldmann, D., Hundhausen, M., Weber, H. B., Seyller, Th.
Publikováno v:
Appl. Phys. Lett. 99, 122106 (2011)
We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy we prove that the SiC(0001) surface is saturated with hydroge
Externí odkaz:
http://arxiv.org/abs/1103.3997
Akademický článek
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Autor:
Fromm, F.
Publikováno v:
The Journal of Higher Education, 1954 May 01. 25(5), 239-286.
Externí odkaz:
https://www.jstor.org/stable/1977198
Autor:
Fromm, F.
Publikováno v:
Botanical Gazette, 1951 Sep 01. 113(1), 86-90.
Externí odkaz:
https://www.jstor.org/stable/2472601
Autor:
Fromm, F., O'Donnell, M. Lawrence
Publikováno v:
Proceedings of the Pennsylvania Academy of Science, 1955 Jan 01. 29, 135-140.
Externí odkaz:
https://www.jstor.org/stable/44109947