Zobrazeno 1 - 10
of 423
pro vyhledávání: '"Fromherz T"'
Publikováno v:
Nanoscale Research Letters, Vol 5, Iss 12, Pp 1868-1872 (2010)
Abstract For randomly nucleated SiGe/Si(001) islands, a significantly stronger blue-shift of the PL spectra as a function of the excitation intensity is observed when compared to islands grown on patterned substrates side by side within the same run
Externí odkaz:
https://doaj.org/article/7c4b78b374764243b733a1331aae2d89
Autor:
Spindlberger, L., Aberl, J., Vukušić, L., Fromherz, T., Hartmann, J.-M., Fournel, F., Prucnal, S., Murphy-Armando, F., Brehm, M.
Publikováno v:
In Materials Science in Semiconductor Processing October 2024 181
Autor:
Spindlberger, L., Csóré, A., Thiering, G., Putz, S., Karhu, R., Hassan, J. Ul, Son, N. T., Fromherz, T., Gali, A., Trupke, M.
Publikováno v:
Phys. Rev. Applied 12, 014015 (2019)
We study the optical properties of tetravalent vanadium impurities in 4H silicon carbide (4H SiC). Emission from two crystalline sites is observed at wavelengths of 1.28 \mum and 1.33 \mum, with optical lifetimes of 163 ns and 43 ns. Group theory and
Externí odkaz:
http://arxiv.org/abs/1901.05371
Autor:
Simbula, A., Schatzl, M., Zagaglia, L., Alpeggiani, F., Andreani, L. C., Schäffler, F., Fromherz, T., Galli, M., Gerace, D.
Publikováno v:
APL Photonics 2, 056102 (2017)
We report on the design, fabrication and optical characterization of bichromatic photonic crystal cavities in thin silicon membranes, with resonances around 1550 nm wavelength. The cavity designs are based on a recently proposed photonic crystal impl
Externí odkaz:
http://arxiv.org/abs/1612.00594
Autor:
Grydlik, M., Hackl, F., Groiss, H., Glaser, M., Halilovic, A., Fromherz, T., Jantsch, W., Schäffler, F., Brehm, M.
Publikováno v:
ACS Photonics 3, 298-303 (2016)
Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements would be SIT c
Externí odkaz:
http://arxiv.org/abs/1505.03380
Autor:
Klenovský, P., Brehm, M., Křápek, V., Lausecker, E., Munzar, D., Hackl, F., Steiner, H., Fromherz, T., Bauer, G., Humlíček, J.
Publikováno v:
Physical Review B 86, 115305 (2012)
The pumping intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The PL results from recombinations of holes localized in the SiGe quantum
Externí odkaz:
http://arxiv.org/abs/1209.6230
We explore the midinfrared absorption of strain-compensated p-Si0.2Ge0.8/Si quantum wells for various well thicknesses and temperatures. Owing to the large band offset due to the large bi-axial strain contrast between the wells and barriers, the inte
Externí odkaz:
http://arxiv.org/abs/cond-mat/0505338
Publikováno v:
Semicond. Sci. Technol. 19 (2004) L115-L117
A resonant-cavity enhanced detector operating in the mid-infrared at a wavelength around 3.6 micron is demonstrated. The device is based on a narrow-gap lead salt heterostructure grown by molecular beam epitaxy. Below 140 K, the photovoltage clearly
Externí odkaz:
http://arxiv.org/abs/cond-mat/0409153
Autor:
Muehlberger, M., Boehm, M., Bergmair, I., Chouiki, M., Schoeftner, R., Kreindl, G., Kast, M., Treiblmayr, D., Glinsner, T., Miller, R., Platzgummer, E., Loeschner, H., Joechl, P., Eder-Kapl, S., Narzt, T., Lausecker, E., Fromherz, T.
Publikováno v:
In Microelectronic Engineering August 2011 88(8):2070-2073
Publikováno v:
In Energy Procedia 2011 10:83-87