Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Fritz Redeker"'
Autor:
Ingemar Carlsson, Bogdan Swedek, Fritz Redeker, Katrina Mikhaylich, Tomohiko Kitajima, Brian J. Brown, Kun Xu, Sidney P. Huey, Shou-sung Chang, Wen-chiang Tu, Hassan G. Iravani, Shih-Haur Shen, Tzu-Yu Liu, Jason G. Fung
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P361-P367
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0174a413c9ae4afc7e17c926f06c9f1
https://doi.org/10.1149/2.0371606jss
https://doi.org/10.1149/2.0371606jss
Chemical mechanical planarization has been widely applied to selectively remove materials for topography planarization and device structure formation in semiconductor manufacturing. The selective material removal is achieved by using chemical reactio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c577c3c878658321996084be766c639
https://doi.org/10.1016/b978-0-323-51084-4.00005-8
https://doi.org/10.1016/b978-0-323-51084-4.00005-8
Autor:
Kaveh Bakhtari, Twan Bearda, Stephen P. Beaudoin, Joel L. Bigman, Brian Brown, Ahmed Busnaina, Yves J. Chabal, Yufei Chen, Hua Cui, Doru Florescu, Glenn W. Gale, Dennis W. Hess, Steven M. Hues, Werner Kern, Brian A. Knollenberg, Jeffrey M. Lauerhaas, Luke Lovejoy, Paul W. Mertens, Katrina Mikhaylichenko, Anthony J. Muscat, Nagarjuna R. Paluvai, Jin-Goo Park, Fritz Redeker, Richard F. Reidy, Karen A. Reinhardt, Daniel R. Rodier, Antonio L.P. Rotondaro, Sara M. Rupich, R. Prasanna Venkatesh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5cda66442a5f147b6a3d106f3ebd38b
https://doi.org/10.1016/b978-0-323-51084-4.01002-9
https://doi.org/10.1016/b978-0-323-51084-4.01002-9
Publikováno v:
2016 China Semiconductor Technology International Conference (CSTIC).
As device geometry shrinks, defect reduction for yield improvement has always been the key focus in CMP process qualification. New post-CMP cleaning capability is demanded for meeting defect reduction requirement. To address the cleaning challenges i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::788d5a78b60b60d5f5f188b913105c25
https://doi.org/10.1109/cstic.2016.7464039
https://doi.org/10.1109/cstic.2016.7464039
Publikováno v:
Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).
Pattern dependent copper dishing and oxide erosion have been characterized as a function of overpolishing. Copper thickness loss is the sum of field oxide loss, local oxide erosion, and copper dishing, and all of them increase with the degree of over
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2db4c662439b6b83ff094bfc6448d292
https://doi.org/10.1109/iitc.1999.787110
https://doi.org/10.1109/iitc.1999.787110
Autor:
L. Knowles, T. Myers, Kapila Wijekoon, G. Amico, I. Cherian, Stan D. Tsai, S. Mishra, K. Puntambekar, Savitha Nanjangud, R. Tolles, Ping Li, Fritz Redeker, C. Schmidt, B. Sun, L. Chen, R. Kistler, T. Pan, C. Baker, Madhavi R. Chandrachood, S. Wang, J. Hawkins, V. Brusic
Publikováno v:
IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168).
A chemical mechanical polishing (CMP) process for copper damascene structures has been developed and characterized on a second generation, multiple platen polishing tool. Several formulations of experimental copper slurries containing alumina abrasiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e083965519c6bb3949f844536f45d43a
https://doi.org/10.1109/asmc.1998.731616
https://doi.org/10.1109/asmc.1998.731616
Autor:
David H. Mai, Yufei Chen, Rajeev Bajaj, Fritz Redeker, Yuchun Wang, Kapila Wijekoon, Yongsik Moon
Publikováno v:
MRS Proceedings. 671
Summary:This paper describes CMP challenges in development of copper-low k process technology. As copper/oxide or copper/FSG backend schemes are being implemented successfully in early manufacturing, development focus has shifted to Cu/OSG (organo-si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0097665da288dd911905ef420ef1431
https://doi.org/10.1557/proc-671-m7.3
https://doi.org/10.1557/proc-671-m7.3
Publikováno v:
SPIE Proceedings.
A high aspect ratio (> 15:1), sub-micron, deep capacitor trench process is demonstrated in an 8 inch Applied Materials P5000E magnetically enhanced reactive ion etcher (MERIE) using HBr/NF3/He-O2 chemistry. Through the insertion of ferro-magnetic she
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29b98a83d9443175b20b582dffe5a145
https://doi.org/10.1117/12.142936
https://doi.org/10.1117/12.142936
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