Zobrazeno 1 - 10
of 177
pro vyhledávání: '"Fritz Phillipp"'
Publikováno v:
Thin Solid Films. 615:145-151
The thermal crystallization of heavily hydrogenated, amorphous Ge (a-Ge:H) and ultra-pure amorphous Ge (a-Ge) thin films was investigated, on a comparative basis, by X-ray diffraction and high-resolution transmission electron microscopy (HRTEM) perfo
Autor:
Thomas Tietze, Zumin Wang, Eberhard Goering, Johannes Baier, Yu-Chun Chen, Andreas Leineweber, Gisela Schütz, Fritz Phillipp
Publikováno v:
Journal of Materials Chemistry C. 4:4166-4175
We unambiguously discovered the existence of room-temperature ferromagnetic-like behavior (RTFM) in pure ZnO pellets, which are made from the nanoparticles showing only paramagnetism and diamagnetism. In contrast to previous reports, our systematic w
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38fc21f5af2b56aa6ddc991d41eeed20
https://doi.org/10.1201/9781351074636-83
https://doi.org/10.1201/9781351074636-83
Autor:
Joachim Gräfe, Eberhard Goering, Fritz Phillipp, P. Audehm, Gisela Schütz, Mathias V. Schmidt
Publikováno v:
physica status solidi (a). 212:2114-2123
FeMn/Co thin-films, a purely metallic exchange-bias system, were prepared on (100)-oriented MgO single crystals. The layers were grown by molecular beam epitaxy (MBE). The crystalline and magnetic properties could be tuned by using sputtered Pt buffe
Autor:
Hongyi Zhang, Oliver G. Schmidt, Armando Rastelli, Paola Atkinson, Markus Pfeiffer, Klas Lindfors, Bernhard Fenk, Fritz Phillipp, Harald Giessen, Markus Lippitz
Publikováno v:
Nano Letters. 14:197-201
Plasmonics offers the opportunity of tailoring the interaction of light with single quantum emitters. However, the strong field localization of plasmons requires spatial fabrication accuracy far beyond what is required for other nanophotonic technolo
Publikováno v:
Nano Letters. 12:6126-6132
Convective transportation of materials in the solid state occurring in a prototype solid bilayer system of Al and Si with negligible mutual solubility has been directly imaged in real time at nanoscale using a valence energy-filtered transmission ele
Autor:
V. B. Özdöl, P. A. van Aken, Fritz Phillipp, B. Ögüt, B. Rahmati, Christoph Koch, Wilfried Sigle, Vesna Srot, Neng Yun Jin-Phillipp
Publikováno v:
International Journal of Materials Research. 102:815-827
The Stuttgart Center for Electron Microscopy at the Max Planck Institute for Metals Research was founded in 2005, fo- cusing a long tradition of transmission electron microscopy research within the former department for internal bound- aries, headed
Autor:
Fritz Phillipp, E. Dupois, A. Łaszcz, J. Katcki, P. A. van Aken, Nicolas Reckinger, J. Ratajczak, A. Czerwinski
Publikováno v:
XIII International Conference on Electron Microscopy, EM'2008
XIII International Conference on Electron Microscopy, EM'2008, 2008, Cracow-Zakopane, Poland
Journal of Microscopy
Journal of Microscopy, Wiley, 2010, 237, pp.379-383. ⟨10.1111/j.1365-2818.2009.03264.x⟩
Journal of Microscopy, 2010, 237, pp.379-383. ⟨10.1111/j.1365-2818.2009.03264.x⟩
XIII International Conference on Electron Microscopy, EM'2008, 2008, Cracow-Zakopane, Poland
Journal of Microscopy
Journal of Microscopy, Wiley, 2010, 237, pp.379-383. ⟨10.1111/j.1365-2818.2009.03264.x⟩
Journal of Microscopy, 2010, 237, pp.379-383. ⟨10.1111/j.1365-2818.2009.03264.x⟩
In this paper, we present results of transmission electron microscopy studies on erbium silicide structures fabricated under various thermal conditions. A titanium cap has been used as a protective layer against oxidation during rapid thermal anneali
Autor:
Jacek Ratajczak, J. Katcki, Fritz Phillipp, P. A. van Aken, Andrzej Czerwiński, Anna Szerling, A. Łaszcz
Publikováno v:
Journal of Microscopy. 237:347-351
We report on transmission electron microscopy studies of Au/Pt/Ti/Pt(10-30 nm) contact structures for high power GaAs/InGaAs semiconductor lasers. The studies showed that annealing at 450 degrees C of contact structures causes the reaction of whole P
Publikováno v:
Journal of Materials Research. 24:3294-3299
The process of ultrathin Al-induced crystallization of amorphous Si (a-Si) has been investigated by using high-resolution transmission electron microscopy and Auger electron spectroscopic depth profiling. Ultrathin Al overlayers, with thicknesses of