Zobrazeno 1 - 10
of 134
pro vyhledávání: '"Friel, I"'
Autor:
Breeze, B G, Meara, C J, Wu, X X, Michaels, C P, Gupta, R, Diggle, P L, Dale, M W, Cann, B L, Ardon, T, D'Haenens-Johansson, U F S, Friel, I, Rayson, M J, Briddon, P R, Goss, J P, Newton, M E, Green, B L
Publikováno v:
Phys. Rev. B 101, 184115 (2020)
We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribute to substitutional silicon in diamond, and identify a silicon-vacancy
Externí odkaz:
http://arxiv.org/abs/2002.01712
Publikováno v:
Diamond and Related Materials, 18, 808 - 815 (2009)
In order to improve the performance of existing technologies based on single crystal diamond grown by chemical vapour deposition (CVD), and to open up new technologies in fields such as quantum computing or solid state and semiconductor disc lasers,
Externí odkaz:
http://arxiv.org/abs/0909.1200
Autor:
Martineau, P M, Gaukroger, M P, Guy, K B, Lawson, S C, Twitchen, D J, Friel, I, Hansen, J O, Summerton, G C, Addison, T P G, Burns, R
Publikováno v:
P M Martineau et al 2009 J. Phys.: Condens. Matter 21 364205
Homoepitaxial chemical vapour deposition (CVD) on high pressure high temperature (HPHT) synthetic diamond substrates allows production of diamond material with controlled point defect content. In order to minimize the extended defect content, however
Externí odkaz:
http://arxiv.org/abs/0909.1205
Autor:
Balmer, R S, Brandon, J R, Clewes, S L, Dhillon, H K, Dodson, J M, Friel, I, Inglis, P N, Madgwick, T D, Markham, M L, Mollart, T P, Perkins, N, Scarsbrook, G A, Twitchen, D J, Whitehead, A J, Wilman, J J, Woollard, S M
Publikováno v:
R S Balmer et al 2009 J. Phys.: Condens. Matter 21 364221
Substantial developments have been achieved in the synthesis of chemical vapour deposition (CVD) diamond in recent years, providing engineers and designers with access to a large range of new diamond materials. CVD diamond has a number of outstanding
Externí odkaz:
http://arxiv.org/abs/0909.1185
Publikováno v:
In Procedia CIRP 2017 60:92-97
Autor:
Balmer, R. S., Friel, I., Woollard, S. M., Wort, C. J. H., Scarsbrook, G. A., Coe, S. E., El-Hajj, H., Kaiser, A., Denisenko, A., Kohn, E., Isberg, J.
Publikováno v:
Philosophical Transactions: Mathematical, Physical and Engineering Sciences, 2008 Jan . 366(1863), 251-265.
Externí odkaz:
https://www.jstor.org/stable/25190674
Publikováno v:
In Diamond & Related Materials 2009 18(9):1163-1166
Autor:
Plucinski, Lukasz, Colakerol, Leyla, Bernardis, Sarah, Zhang, Yufeng, Wang, Shancai, O’Donnell, Cian, Smith, Kevin E., Friel, I., Moustakas, T.D.
Publikováno v:
In Surface Science 2006 600(1):116-123
Autor:
Plucinski, L., Learmonth, T., Colakerol, L., Bernardis, S., Zhang, Yufeng, Glans, P.-A., Smith, K.E., Zakharov, A.A., Nyholm, R., Grzegory, I., Suski, T., Porowski, S., Friel, I., Moustakas, T.D.
Publikováno v:
In Solid State Communications 2005 136(4):191-195
Autor:
Bhattacharyya, A. *, Friel, I, Iyer, S., Chen, T.-C., Li, W., Cabalu, J., Fedyunin, Y., Ludwig, K.F., Jr., Moustakas, T.D., Maruska, H.-P., Hill, D.W., Gallagher, J.J., Chou, M.C., Chai, B.
Publikováno v:
In Journal of Crystal Growth 2003 251(1):487-493