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pro vyhledávání: '"Friedrich P. Leisenberger"'
Publikováno v:
Fluctuation and Noise Letters. 21
New results are presented for the low frequency noise (LFN) characterization of N-MOS and P-MOS from a standard CMOS technology node. The impact of n[Formula: see text] and p[Formula: see text] polysilicon gate doping on the LFN for N-MOS and P-MOS d
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:1676-1682
The structure and growth of Tl overlayers on Si(111)7×7 surfaces have been investigated using ultraviolet photoelectron spectroscopy,low-energy electron diffraction(LEED),Auger electron spectroscopy(AES), and scanning tunneling microscopy(STM). At l