Zobrazeno 1 - 10
of 180
pro vyhledávání: '"Friedman, Adam L"'
Autor:
Wines, Daniel, Ibrahim, Akram, Gudibandla, Nishwanth, Adel, Tehseen, Abel, Frank M., Jois, Sharadh, Saritas, Kayahan, Krogel, Jaron T., Yin, Li, Berlijn, Tom, Hanbicki, Aubrey T., Stephen, Gregory M., Friedman, Adam L., Krylyuk, Sergiy, Davydov, Albert, Donovan, Brian, Jamer, Michelle E., Walker, Angela R. Hight, Choudhary, Kamal, Tavazza, Francesca, Ataca, Can
Two-dimensional (2D) 1T-VSe$_2$ has prompted significant interest due to the discrepancies regarding alleged ferromagnetism (FM) at room temperature, charge density wave (CDW) states and the interplay between the two. We employed a combined Diffusion
Externí odkaz:
http://arxiv.org/abs/2409.19082
Autor:
Le, Son T., Mai, Thuc T., Munoz, Maria F., Walker, Angela R. Hight, Richter, Curt A., Hanbicki, Aubrey T., Friedman, Adam L.
Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped in-operando, re
Externí odkaz:
http://arxiv.org/abs/2403.01998
Autor:
DeMell, Jennifer E., Naumov, Ivan, Stephen, Gregory M., Blumenschein, Nicholas A., Sun, Y. -J. Leo, Fedorko, Adrian, Robinson, Jeremy T., Campbell, Paul M., Taylor, Patrick J., Heiman, Don, Dev, Pratibha, Hanbicki, Aubrey T., Friedman, Adam L.
Publikováno v:
Adv. Funct. Mat., 2311875 (2023)
Mechanical stacking of two dissimilar materials often has surprising consequences for heterostructure behavior. In particular, a two-dimensional electron gas (2DEG) is formed in the heterostructure of the topological crystalline insulator Pb0.24Sn0.7
Externí odkaz:
http://arxiv.org/abs/2307.13113
Autor:
Blumenschein, Nicholas A., Stephen, Gregory M., Cress, Cory D., LaGasse, Samuel W., Hanbicki, Aubrey T., Bennett, Steven P., Friedman, Adam L.
Publikováno v:
Sci Rep 12, 22061 (2022)
Due to its proximity to room temperature and demonstrated high degree of temperature tunability, the metamagnetic ordering transition in FeRh is attractive for novel high-performance computing devices seeking to use magnetism as the state variable. W
Externí odkaz:
http://arxiv.org/abs/2208.02138
Autor:
Stephen, Gregory M., Naumov, Ivan, Blumenschein, Nicholas A., Sun, Yi-Jan Leo, DeMell, Jennifer E., Shirodkar, Sharmila, Dev, Pratibha, Taylor, Patrick J., Robinson, Jeremy T., Campbell, Paul M., Hanbicki, Aubrey T., Friedman, Adam L.
While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, two-dimensional materials and topological materials,
Externí odkaz:
http://arxiv.org/abs/2207.13598
Autor:
Vera, Alexander, Zheng, Boyang, Yanez, Wilson, Yang, Kaijie, Kim, Seong Yeoul, Wang, Xinglu, Kotsakidis, Jimmy C., El-Sherif, Hesham, Krishnan, Gopi, Koch, Roland J., Bowen, T. Andrew, Dong, Chengye, Wang, Yuanxi, Wetherington, Maxwell, Rotenberg, Eli, Bassim, Nabil, Friedman, Adam L., Wallace, Robert M., Liu, Chaoxing, Samarth, Nitin, Crespi, Vincent H., Robinson, Joshua A.
Publikováno v:
ACS Nano 2024, 18, 33, 21985-21997
A scalable platform to synthesize ultrathin heavy metals may enable high efficiency charge-to-spin conversion for next-generation spintronics. Here we report the synthesis of air-stable, epitaxially registered monolayer Pb underneath bilayer graphene
Externí odkaz:
http://arxiv.org/abs/2205.06859
Autor:
Friedman, Adam L., Hanbicki, Aubrey T.
For the last 60 years, advances in conventional computing platforms have been driven by the empirical notion known as Moores law. In its essence, Moores law is a ubiquitous description of the exponential increase in transistor density acting as a pro
Externí odkaz:
http://arxiv.org/abs/2110.15822
Akademický článek
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Akademický článek
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Autor:
Wang, Qinqin, Xie, Ti, Blumenschein, Nicholas A., Song, Zhihao, Kotsakidis, Jimmy C., Hanbicki, Aubrey T., Susner, Michael A., Conner, Benjamin S., Tan, Qishuo, Lee, Seng Huat, Mao, Zhiqiang, Ling, Xi, Low, Tony, Wang, Jian-Ping, Friedman, Adam L., Gong, Cheng
Publikováno v:
In Matter 7 December 2022 5(12):4425-4436
