Výsledky vyhledávání - "Friedemann, Miriam"

Report

Precision quantization of Hall resistance in transferred graphene

Autor: Woszczyna, Mirosław, Friedemann, Miriam, Götz, Martin, Pesel, Eckart, Pierz, Klaus, Weimann, Thomas, Ahlers, Franz J.

Publikováno v: Applied Physics Letters 100, 164106 (2012)

We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto GaAs, rev

Externí odkaz: http://arxiv.org/abs/1203.1798

Zobrazit plný text záznamu

Report

Graphene p-n junction Arrays as Quantum-Hall Resistance Standards

Autor: Woszczyna, Mirosław, Friedemann, Miriam, Dziomba, Thorsten, Weimann, Thomas, Ahlers, Franz J.

Publikováno v: Appl. Phys. Lett. 99, 022112 (2011)

We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fabricating series quantum Hall resistors without complex multi-layer me

Externí odkaz: http://arxiv.org/abs/1105.0838

Zobrazit plný text záznamu

Report

Magneto-Transport Properties of Exfoliated Graphene on GaAs

Autor: Woszczyna, Mirosław, Friedemann, Miriam, Pierz, Klaus, Weimann, Thomas, Ahlers, Franz J.

Publikováno v: Journal of Applied Physics, 110, 043712 (2011)

We studied the magneto-transport properties of graphene prepared by exfoliation on a III V semiconductor substrate. Tuneability of the carrier density of graphene was achieved by using a doped GaAs substrate as a back-gate. A GaAs/AlAs multilayer, de

Externí odkaz: http://arxiv.org/abs/1103.3367

Zobrazit plný text záznamu