Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Frieda van Roey"'
Autor:
Pieter Wöltgens, Alberto Colina, David Rio, Maxence Delorme, Tatiana Kovalevich, Arame Thiam, Frieda van Roey, Odysseas Zografos
Publikováno v:
Optical and EUV Nanolithography XXXV.
Autor:
Gian Lorusso, Danilo De Simone, Hiroyuki Shindo, Tsuyoshi Kondo, Hirohito Koike, Frieda Van Roey, Peter De Bisschop, Yasutaka Toyoda, Christophe Beral, Taeko Kashiwa, Anne-Laure Charley, Yasushi Ebizuka, Yukari Yamada, Naoma Ban, Mohamed Saib
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
As the development of Extreme Ultraviolet Lithography (EUVL) is progressing toward the sub-10nm generation, the process window becomes very tight. In this situation, local Critical Dimension (CD) variability including stochastic defect directly affec
Publikováno v:
Microelectronic Engineering. 190:33-37
Most scanning electron microscope (SEM) measurements of pattern roughness today produce biased results, combining the true feature roughness with noise from the SEM. Further, the bias caused by SEM noise changes with measurement conditions and with t
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
Background: The measurement of line-edge and linewidth roughness of small features for semiconductor manufacturing is commonly accomplished using a scanning electron microscope (SEM). But these measurements are biased by the noise inherent in SEM ima
Autor:
Chan-Ha Park, Jeroen Van de Kerkhove, Nouredine Rassoul, Anne-Laure Charley, Pieter Vanelderen, Frederic Lazzarino, Lieve Van Look, Amir-Hossein Tamaddon, Romuald Blanc, Frieda Van Roey, Geert Vandenberghe, Danilo De Simone, Kurt G. Ronse, Chang-Moon Lim, Junghyung Lee, Sarohan Park, Kilyoung Lee, Nadia Vandenbroeck, Roberto Fallica, Gian Lorusso
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
Extreme ultraviolet (EUV) materials are deemed as critical to enable and extend the EUV lithography technology. Currently both chemically amplified resist (CAR) and metal-oxide resist (MOR) platforms are candidates to print tight features on wafer, h
Autor:
Andreas Frommhold, Gian Lorusso, Guido Schiffelers, Gijsbert Rispens, Vito Rutigliani, Frieda Van Roey
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
In order to meet the tight Line Width Roughness (LWR) requirements for advanced metrology nodes, it is critical to be able to identify what the fundamental sources of roughness are, so that they can be individually minimized. In fact, more and more e
Autor:
Gian Lorusso, Evangelos Gogolides, Frieda Van Roey, Eva Giannatou, Harria Papagrorgiou, George Papavieros, Vassilios Constantoudis, Vito Rutigliani
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
Deep Learning (DL) techniques based on Denoising Convolutional Neural Networks (DeCNN) are applied in the denoising of SEM images of line patterns to contribute to noise-reduced (unbiased) LER nanometrology. The models of DeCNN are trained in a suffi
Autor:
Anne-Laure Charley, Frieda Van Roey, Toru Ishimoto, Chami Perera, Alain Moussa, Shunsuke Koshihara, Vito Rutigliani, Takumichi Sutani, Masami Ikota, Patrick P. Naulleau, Vassilios Constantoudis, Gian Lorusso, Chris A. Mack
Publikováno v:
Lorusso, GF; Sutani, T; Rutigliani, V; Van Roey, F; Moussa, A; Charley, AL; et al.(2018). Need for LWR metrology standardization: The imec roughness protocol. Journal of Micro/ Nanolithography, MEMS, and MOEMS, 17(4). doi: 10.1117/1.JMM.17.4.041009. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/1hz5s0w7
© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE). As semiconductor technology keeps moving forward, undeterred by the many challenges ahead, one specific deliverable is capturing the attention of many experts in the field: line width
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02d225ced8adc2830c49210a7aea46e4
http://www.escholarship.org/uc/item/1hz5s0w7
http://www.escholarship.org/uc/item/1hz5s0w7
Autor:
Shunsuke Koshihara, Vito Rutigliani, Masami Ikota, Patrick P. Naulleau, Alain Moussa, Toru Ishimoto, Gian Lorusso, Frieda Van Roey, Takumichi Sutani, Anne-Laure Charley, Chris A. Mack, Vassilios Constantoudis
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
As semiconductor technology keeps moving forward, undeterred by the many challenges ahead, one specific deliverable is capturing the attention of many experts in the field: Line Width Roughness (LWR) specifications are expected to be less than 2nm in
Autor:
Gian Lorusso, Evangelos Gogolides, Vassilios Constantoudis, Vito Rutigliani, George Papavieros, Frieda Van Roey
Publikováno v:
Advanced Etch Technology for Nanopatterning VII.
The aim of this paper is to investigate the role of etch transfer in two challenges of LER metrology raised by recent evolutions in lithography: the effects of SEM noise and the cross-line and edge correlations. The first comes from the ongoing scali