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Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins

Autor: Severino A, Frewin C, Bongiorno C, Anzalone R, Saddow SE, La Via F

Publikováno v: Diamond and related materials 18 (2009): 1440–1449.
info:cnr-pdr/source/autori:Severino A, Frewin C, Bongiorno C, Anzalone R, Saddow SE, La Via F/titolo:Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins/doi:/rivista:Diamond and related materials/anno:2009/pagina_da:1440/pagina_a:1449/intervallo_pagine:1440–1449/volume:18

Growth of 3C-SiC on (100) Si has been performed via chemical vapor deposition under two pressure regimes (low and atmospheric pressure) in the early stage of growth. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) have been c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::4d242d76c05edcd96d4e6912fd676356
https://publications.cnr.it/doc/36550

Silicon Carbide Materials for Biomedical Applications.

Autor: Frewin, C. L., Coletti, C., Register, J. J., Nezafati, M., Thomas, S., Saddow, S. E.

Publikováno v: Carbon for Sensing Devices; 2015, p153-207, 55p

3C-SiC on Si: A bio- and hemo-compatible material for advanced nano-bio devices.

Autor: Saddow, S. E., Frewin, C. L., Nezafati, M., Oliveros, A., Afroz, S., Register, J., Reyes, M., Thomas, S.

Publikováno v: 2014 IEEE 9th Nanotechnology Materials & Devices Conference (NMDC); 2014, p49-53, 5p

Single-crystal Silicon Carbide: A Biocompatible and Hemocompatible Semiconductor for Advanced Biomedical Applications.

Autor: Saddow, S. E., Coletti, C., Frewin, C. L., Oliveros, A., Jarosezski, M., Schettini, N.

Publikováno v: MRS Online Proceedings Library; 2010, Vol. 1246 Issue 1, p1-6, 6p