Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Fredrick Claus Zumsteg"'
Autor:
Frank Leonard Schadt, Michael Crawford, Roger H. French, Andrew Edward Feiring, Fredrick Claus Zumsteg, Christopher P. Junk, Weiming Qiu, Hoang Vi Tran, William B. Farnham, Jerald Feldman, Viacheslav A. Petrov, Kenneth W. Leffew
Publikováno v:
Macromolecules. 39:3252-3261
Twenty-two tricyclo(4.2.1.02,5)non-7-ene (TCN) or 3-oxatricyclononene monomers, having fluorinated or nonfluorinated substituents on the four-membered rings, were prepared by cycloaddition reactions of functionalized olefins with norbornadiene or qua
Autor:
Roger H. French, Andrew Edward Feiring, Hoang Vi Tran, William B. Farnham, Michael Crawford, Kenneth W. Leffew, Viacheslav A. Petrov, Frank Leonard Schadt, Fredrick Claus Zumsteg
Publikováno v:
Macromolecules. 39:1443-1448
Novel norbornene and (4.2.1.02,5)tricyclononene monomers bearing two hexafluoro-2-propanol substituents are polymerized with tetrafluoroethylene in solution, giving amorphous, largely alternating copolymers. The norbornene copolymer shows excellent t
Autor:
Roger H. French, M. K. Crawford, Frank Leonard Schadt, Robert Clayton Wheland, Fredrick Claus Zumsteg, William B. Farnham, A. E. Feiring, Jerald Feldman, Kenneth W. Leffew, Viacheslav A. Petrov
Publikováno v:
Journal of Fluorine Chemistry. 122:11-16
Photolithography at 157 nm requires development of new photoresists that are highly transparent at this wavelength. Transparent fluoropolymer platforms have been identified which also possess other materials properties required for chemically amplifi
Autor:
Viacheslav A. Petrov, Frank Leonard Schadt, Jerald Feldman, Kenneth Wayne Leffew, A. E. Feiring, William Brown Farnham, Fredrick Claus Zumsteg, Roger H. French, M. K. Crawford
Publikováno v:
Journal of Photopolymer Science and Technology. 15:677-687
Implementation of 157nm lithography using single-layer photoresists will require the development of resists with sufficiently high transparency in the vacuum ultraviolet to permit high resolution imaging using films approximately 200nm thick. One of
Autor:
M. K. Crawsfored, Viacheslav A. Petrov, Fredrick Claus Zumsteg, A. E. Feiring, Hoang Vi Tran, W. B. Fahnham, Kenneth W. Leffew, Schadt
Publikováno v:
Journal of Photopolymer Science and Technology. 18:467-469
We report here a family of tetrafluoroethylene (TFE) based photoresist polymers that image at 193 nm with low line edge roughness relative to other candidate polymers, while also demonstrating good resolution, high contrast, high transparency at the
Autor:
Frank Leonard Schadt, Weiming Qiu, Robert Clayton Wheland, William Brown Farnham, Fredrick Claus Zumsteg, Kenneth Wayne Leffew, Viacheslav A. Petrov, Andrew Edward Feiring, Jerald Feldman, Michael Crawford, Roger H. French, Hoang Vi Tran
Publikováno v:
Advances in Resist Technology and Processing XX.
We have developed a family of 157 nm resists that utilize fluorinated terpolymer resins composed of 1) tetrafluoroethylene (TFE), 2) a norbornene fluoroalcohol (NBFOH), and 3) t-butyl acrylate (t-BA). TFE incorporation reduces optical absorbance at 1
Autor:
Frank Leonard Schadt, Andrew Edward Feiring, Roger H. French, Michael Crawford, Fredrick Claus Zumsteg, Viacheslav A. Petrov, Robert J. Smalley, Jerald Feldman
Publikováno v:
SPIE Proceedings.
During the past year the probability that 157 nm lithography will precede next generation lithographies such as EUV or EPL has increased, partly due to encouraging advances in the design of polymeric materials, which have sufficient transparency at 1
Autor:
Jerald Feldman, Andrew Edward Feiring, David J. Jones, Robert Clayton Wheland, Fredrick Claus Zumsteg, Roger H. French, James N. Hilfiker, Ron A. Synowicki
Publikováno v:
SPIE Proceedings.
With the introduction of 157 nm as the next optical lithography wavelength, the need for new pellicle and photoresist materials optimized for this wavelength has produced much activity in optical characterization of thin film materials. Here we focus
Autor:
Jerald Feldman, Susan M. Holl, Roger H. French, Fredrick Claus Zumsteg, Mookkan Periyasamy, Robert J. Smalley, Roderick R. Kunz, Veena Rao, Michael Crawford, Ling Liao, Andrew Edward Feiring, Frank Leonard Schadt
Publikováno v:
Advances in Resist Technology and Processing XVII.
The design ofan organic material satisfying all ofthe requirements for a single layer photolithography resist at 157 nm is aformidable challenge. All known resists used for optical lithography at 193 nm or longer wavelengths are too highlyabsorbing a