Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Frederik Leys"'
Publikováno v:
Biology Open, Vol 5, Iss 8, Pp 1052-1060 (2016)
The stroke-cam flapping mechanism presented in this paper closely mimics the wing motion of a hovering Rufous hummingbird. It is the only lightweight hummingbird-sized flapping mechanism which generates a harmonic wing stroke with both a high flappin
Externí odkaz:
https://doaj.org/article/89fb2ca5c3b44d77aad6a10712a19f84
Publikováno v:
Biology Open
Biology Open, Vol 5, Iss 8, Pp 1052-1060 (2016)
Biology Open, Vol 5, Iss 8, Pp 1052-1060 (2016)
The stroke-cam flapping mechanism presented in this paper closely mimics the wing motion of a hovering Rufous hummingbird. It is the only lightweight hummingbird-sized flapping mechanism which generates a harmonic wing stroke with both a high flappin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1edee31a61927f5758704bbe5ba1fe2
http://europepmc.org/articles/PMC5004601
http://europepmc.org/articles/PMC5004601
ispartof: Journal of Guidance, Control and Dynamics vol:40 issue:11 pages:2934-2940 status: published
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e27f5f05bd10730377846b73b315a35e
https://lirias.kuleuven.be/handle/123456789/603574
https://lirias.kuleuven.be/handle/123456789/603574
Publikováno v:
ROBIO
At small scales such as these of insects and hummingbirds, flapping wing propulsion becomes increasingly efficient compared to other types of flying propulsion. Moreover, flapping wings allow very complex flying maneuvers. These features make flappin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a316103b6f37ccc654d32e1d1cdbad7e
https://doi.org/10.1109/robio.2015.7418945
https://doi.org/10.1109/robio.2015.7418945
Autor:
Andrea Firrincieli, Eddy Simoen, C. Claeys, Jerome Mitard, Roger Loo, Frederik Leys, B. De Jaeger
Publikováno v:
Thin Solid Films. 518:2493-2496
The impact of the silicon passivation layer thickness on the low-frequency (LF) noise performance in linear operation of Ge pMOSFETs has been studied, for devices with different channel lengths. It is shown that for 8 monolayers (MLs) of Si, the LF n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92f8058e1007fb231786707bba5cc66e
https://doi.org/10.1016/j.tsf.2009.09.128
https://doi.org/10.1016/j.tsf.2009.09.128
Autor:
Eddy Simoen, Roger Loo, Andriy Hikavyy, Mireia Bargallo Gonzalez, Frederik Leys, W. Vanherle, Matty Caymax, Kenichi Sano, Antoine Pacco, Peter Verheyen, Brecht De Vos, Masayuki Wada
Publikováno v:
Solid State Phenomena. :177-180
Several device concepts have been further evaluated after the successful implementation of epitaxial Si, SiGe and/or Si:C layers. Most of the next device generations will put limitations on the thermal budget of the deposition processes without makin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::564f62cf1ec91b8600f920f72708f79c
https://doi.org/10.4028/www.scientific.net/ssp.145-146.177
https://doi.org/10.4028/www.scientific.net/ssp.145-146.177
Autor:
Roger Loo, Katsuhiko Miya, Paul Mertens, Frederik Leys, Andriy Hikavyy, Kenichi Sano, Masayuki Wada, Akira Izumi, James Snow, Atsuro Eitoku
Publikováno v:
Solid State Phenomena. :173-176
Strained silicon engineering was first used at the 90-nm node. Nowadays, a series of techniques has seen wide-spread use and many derivatives are available because of their ease of integration and cost-effective features [ , ]. As a main part of stre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aa9dcef01028246a38710a7265edfd6
https://doi.org/10.4028/www.scientific.net/ssp.145-146.173
https://doi.org/10.4028/www.scientific.net/ssp.145-146.173
Autor:
Serge Biesemans, Andriy Hikavyy, Nadine Collaert, Abhisek Dixit, Roger Loo, Peter Verheyen, Frederik Leys, Malgorzata Jurczak, R. Rooyackers
Publikováno v:
Thin Solid Films. 517:101-104
This work will focus on the use of Selective Epitaxial Growth (SEG) of Si and SiGe in multi-gate devices. We will demonstrate the necessity of using SEG in the processing of these narrow fin devices. Reductions of the source/drain resistance and Gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0989d6cbb02f79731c70ab4c176cbf9a
https://doi.org/10.1016/j.tsf.2008.08.031
https://doi.org/10.1016/j.tsf.2008.08.031
Autor:
Mark J. H. van Dal, Roger Loo, Georgios Vellianitis, Rita Rooyackers, Andriy Hikavyy, Frederik Leys, Rob Lander, Peter Verheyen
Publikováno v:
ECS Transactions. 13:329-335
Multigate MOSFET and epi-tip transistors are promising device concepts which are currently actively investigated. Being attractive from the performance point of view they present certain technological challenges. One of them is the difficulty to cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9ef6654c2c9a9ee6c36c31fdc927a01
https://doi.org/10.1149/1.2911514
https://doi.org/10.1149/1.2911514
Vapor Phase Doping with N-type Dopant into Silicon by Atmospheric Pressure Chemical Vapor Deposition
Autor:
Thierry Conard, Ngoc Duy Nguyen, Roger Loo, Matty Caymax, Frederik Leys, Shotaro Takeuchi, Wilfried Vandervorst
Publikováno v:
ECS Transactions. 16:495-502
Atomic layer doping of phosphorus (P) and arsenic (As) into Si was performed using the vapor phase doping (VPD) technique. For increasing deposition time and precursor gas flow rate, the P and As doses tend to saturate at about 0.8 and 1.0 monolayer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55922fda06fccc562a91b08077be0c39
https://doi.org/10.1149/1.2986806
https://doi.org/10.1149/1.2986806